NPN bipolar transistors

NPN transistor, 15A, 160V. Collector current: 15A. Collector/emitter voltage Vceo: 160V. Cost): 35pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L, HI-FI Audio. Note: hFE 5000...20000. Pd (Power Dissipation, Max): 150W. Type of transistor: NPN. Spec info: complementary transistor (pair) SAP15P. BE diode: no. CE diode: no

NPN transistor, 15A, 400V. Collector current: 15A. Collector/emitter voltage Vceo: 400V. Cost): 8pF. Semiconductor material: silicon. Pd (Power Dissipation, Max): 125W. Type of transistor: NPN. Vcbo: 850V. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23, 300V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 300V. C(in): 11pF. Cost): 1.5pF. Semiconductor material: silicon. FT: 50 MHz. Minimum hFE gain: 25. Marking on the case: s1D. Pd (Power Dissipation, Max): 0.36W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Function: high voltage amplifier, SMD version of MPSA42. Quantity per case: 1. Note: complementary transistor (pair) SMBTA92. Spec info: screen printing/SMD code S1D. BE diode: no. CE diode: no

NPN transistor, 1.5A, TO-92, TO-92 (Ammo-Pack), 25V. Collector current: 1.5A. Housing: TO-92. Housing (according to data sheet): TO-92 (Ammo-Pack). Collector/emitter voltage Vceo: 25V. Cost): 9pF. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 200. Minimum hFE gain: 120. Marking on the case: S8050 C. Pd (Power Dissipation, Max): 1W. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 40V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 6V. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor, 0.5A, TO-92, TO-92, 20V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. Cost): 28pF. Semiconductor material: silicon. Function: Class B Push-pull Operation. Max hFE gain: 135. Minimum hFE gain: 96. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.16V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V. Quantity per case: 1. Spec info: excellent hFE linearity. BE diode: no. CE diode: no

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 270 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.45W. Type of transistor: NPN. BE diode: no. CE diode: no

NPN transistor, 4A, TO-220, TO-220AB, 400V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Semiconductor material: silicon. Function: High voltage fast switching. Max hFE gain: 32. Minimum hFE gain: 15. Ic(pulse): 8A. Marking on the case: 13005A. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no

NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30. Minimum hFE gain: 16. Ic(pulse): 16A. Marking on the case: 13007A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 350 ns. Tf(min): 40 ns. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Vebo: 9V. Quantity per case: 1. BE diode: no. CE diode: yes

NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE resistor: 50. Semiconductor material: silicon. Marking on the case: ST13009L. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 700V. Function: hFE 15...28. Quantity per case: 1. Spec info: ST13009L. BE diode: no. CE diode: yes

NPN transistor. Cost): 122pF. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor, 1.5A, SOT-223 ( TO-226 ), SOT-223, 400V. Collector current: 1.5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 400V. Conditioning: roll. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast-switching power transistor. Max hFE gain: 32. Minimum hFE gain: 4. Ic(pulse): 3A. Marking on the case: N83003. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V. Number of terminals: 3. Conditioning unit: 1000. Spec info: complementary transistor (pair) STN93003. BE diode: no. CE diode: no

NPN transistor, 5A, SOT-223 ( TO-226 ), SOT-223, 60V. Collector current: 5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 60V. Cost): 215pF. Conditioning: roll. Semiconductor material: silicon. FT: 130 MHz. Function: Low voltage fast-switching NPN power transistor. Max hFE gain: 350. Minimum hFE gain: 30. Ic(pulse): 10A. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.32V. Vebo: 7V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 1000. BE diode: no. CE diode: no

NPN transistor, 1A, TO-92, TO-92, 700V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 700V. Semiconductor material: silicon. Function: HIGH SWITCH. Pd (Power Dissipation, Max): 1.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Quantity per case: 1. Spec info: High-Speed. BE diode: no. CE diode: no

NPN transistor, 7A, ISOWATT218, ISOWATT218, 700V. Collector current: 7A. Housing: ISOWATT218. Housing (according to data sheet): ISOWATT218. Collector/emitter voltage Vceo: 700V. Semiconductor material: silicon. Function: High voltage fast switching. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Quantity per case: 1

NPN transistor, 8A, TO-220, TO-220, 100V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Semiconductor material: silicon. Max hFE gain: 20000. Minimum hFE gain: 1000. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Number of terminals: 3. Quantity per case: 1. BE resistor: 8k Ohms (R1), 120 Ohms (R2). Function: switching, audio amplifier. Spec info: complementary transistor (pair) TIP107. BE diode: no. CE diode: yes

NPN transistor, 2A, 60V. Collector current: 2A. Collector/emitter voltage Vceo: 60V. Darlington transistor?: yes. Semiconductor material: silicon. Max hFE gain: 1000. Minimum hFE gain: 500. Ic(pulse): 4A. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V. Note: >1000. Spec info: 10k Ohms (R1), 600 Ohms (R2)

NPN transistor, 4A, 80V. Collector current: 4A. Collector/emitter voltage Vceo: 80V. Cost): 2pF. Darlington transistor?: yes. Semiconductor material: silicon. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Note: >1000. Quantity per case: 1. Spec info: TO-220. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-220AB, 5A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 5A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP120. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-220AB, 5A, 5A, TO-220, TO-220, 100V. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 5A. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP122. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: silicon. Maximum dissipation Ptot [W]: 65W. Minimum hFE gain: 1000. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V. Number of terminals: 3. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) TIP127

NPN transistor, 5A, TO-220, TO-220, 100V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Resistor B: yes. BE resistor: 8 k Ohms és 120 Ohms. C(in): TO-220. Cost): 200pF. Conditioning: plastic tube. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: +150°C. Minimum hFE gain: 1000. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V. Number of terminals: 3. Function: 8k Ohms (R1), 120 Ohms (R2). Conditioning unit: 50. Spec info: complementary transistor (pair) TIP127G. BE diode: no. CE diode: yes

NPN transistor, PCB soldering, TO-220AB, 8A, TO-220, TO220, 100V. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 8A. Housing: TO-220. Housing (according to data sheet): TO220. Collector/emitter voltage Vceo: 100V. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP132. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: 15000. Maximum dissipation Ptot [W]: 70W. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 4 v. Vebo: 5V. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) TIP137

NPN transistor, 10A, TO-247, TO-247, 100V. Collector current: 10A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. Cost): 60pF. Darlington transistor?: yes. Semiconductor material: silicon. Function: Complementary power Darlington transistor. Max hFE gain: 1000. Minimum hFE gain: 500. Ic(pulse): 20A. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Monolithic Darlington. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V. Resistor B: Darlington Power Transistor. C(in): 100V. Number of terminals: 3. BE resistor: R1 typ=5k Ohms, R2 typ=60 Ohms. Spec info: complementary transistor (pair) TIP147. BE diode: no. CE diode: yes

NPN transistor, 10A, TO-220, TO-220, 100V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Semiconductor material: silicon. Function: Complementary power Darlington transistor. Max hFE gain: 1000. Minimum hFE gain: 500. Ic(pulse): 20A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Monolithic Darlington. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V. Number of terminals: 3. BE resistor: R1 typ=5k Ohms, R2 typ=60 Ohms. Spec info: complementary transistor (pair) TIP147T. BE diode: no. CE diode: yes

NPN transistor, 15A, TO-247, TO-247, 100V, 100V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: 100V. Conditioning: plastic tube. Semiconductor material: silicon. FT: 3 MHz. Function: audio amplifier. Max hFE gain: 70. Minimum hFE gain: 20. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1V. Vebo: 7V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 90W. Number of terminals: 3. Quantity per case: 1. Note: complementary transistor (pair) TIP2955. Conditioning unit: 30. Spec info: Low collector-emitter saturation voltage

NPN transistor, 3A, TO-220, TO-220, 100V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 24. Minimum hFE gain: 10. Ic(pulse): 5A. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.2V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP32C. BE diode: no. CE diode: no