NPN bipolar transistors

NPN transistor, PCB soldering (SMD), SOT-23, 600mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 150V. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 600mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 150V. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2L. Collector-emitter voltage Uceo [V]: 150V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Marking on the case: 2 L. Equivalents: MMBT5401LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V. Spec info: screen printing/SMD code (2Lx Date Code)

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 160V. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 60. Marking on the case: G1. Equivalents: MMBT5551LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Vebo: 6V. Spec info: screen printing/SMD code G1 (3S Fairchild). BE diode: no. CE diode: no

NPN transistor, PCB soldering (SMD), SOT-23, 600mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 600mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: G1. Collector-emitter voltage Uceo [V]: 160V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, PCB soldering (SMD), SOT-23, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 500mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1GM. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, PCB soldering (SMD), SOT-23, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 500mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1GM. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 300V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 300V. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: high voltage amplifier transistor (SMD version of the MPSA42 transistor). Max hFE gain: 40. Minimum hFE gain: 25. Note: 1D. Marking on the case: 1D. Number of terminals: 3. Pd (Power Dissipation, Max): 240mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Vebo: 6V. Spec info: complementary transistor (pair) MMBTA92. BE diode: no. CE diode: no

NPN transistor, PCB soldering (SMD), SOT-23, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 500mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1D. Collector-emitter voltage Uceo [V]: 300V. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, PCB soldering (SMD), SOT-23, 5mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 5mA. RoHS: no. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3EM. Collector-emitter voltage Uceo [V]: 25V. Cutoff frequency ft [MHz]: 650 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 1.5A, SOT-23 ( TO-236 ), SOT-23, 25V. Collector current: 1.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 25V. Cost): 9pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 350. Minimum hFE gain: 200. Marking on the case: Y1. Pd (Power Dissipation, Max): 0.3W. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 40V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 6V. BE diode: no. CE diode: no

ROHS: Yes. Housing: SOT23. Assembly/installation: SMD. Transistor type: BRT. Polarity: bipolar. Voltage (collector - emitter): 50V. Collector current Ic [A]: 0.1A. Power: 0.246W. Base-resistor resistance: 10k Ohms. Base-emitter resistance: 10k Ohms

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A8A. Collector-emitter voltage Uceo [V]: 50V. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

BE diode: VAN. BE resistor: 42 Ohms. CE diode: VAN. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A8E. Collector-emitter voltage Uceo [V]: 50V. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A8K. Collector-emitter voltage Uceo [V]: 50V. Maximum dissipation Ptot [W]: 0.246W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-218, 160V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Semiconductor material: silicon. FT: 55 MHz. Function: pair of complementary transistors. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP & NPN. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-92, 500mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 500mA. RoHS: yes. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSA42. Collector-emitter voltage Uceo [V]: 300V. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 500mA, TO-92, TO-92, 80V. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. BE resistor: 10. Cost): 300pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 100MHz. Minimum hFE gain: 100. Ic(pulse): 1A. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.25V. Vebo: 4 v. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: yes

NPN transistor, PCB soldering, TO-92, 500mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 500mA. RoHS: yes. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSA06. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 0.5A, 30 v. Collector current: 0.5A. Collector/emitter voltage Vceo: 30 v. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: general purpose. Max hFE gain: 10000. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 0.625W. Technology: Darlington transistor. Tf(min): 125 MHz. Type of transistor: NPN. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V. BE diode: no. CE diode: no

NPN transistor, 500mA, TO-92, TO-92, 30 v. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: general purpose. Max hFE gain: 20000. Minimum hFE gain: 10000. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V. Number of terminals: 3. BE diode: no. CE diode: no

NPN transistor, 45V, 0.2A, TO-92. Collector-Emitter Voltage VCEO: 45V. Collector current: 0.2A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Max frequency: 100 MHz. DC Collector/Base Gain hFE min.: 1000. Applications: Audio

NPN transistor, 0.5A, TO-92, TO-92 (ammo pak), 300V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92 (ammo pak). Collector/emitter voltage Vceo: 300V. Cost): 3pF. Semiconductor material: silicon. FT: 50 MHz. Function: VIDEO amp.. Max hFE gain: 40. Minimum hFE gain: 25. Equivalents: KSP42. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 500mV. Vebo: 6V. Quantity per case: 1. Spec info: complementary transistor (pair) MPSA92. BE diode: no. CE diode: no

NPN transistor, 0.3A, TO-92, TO-92 (ammo pak), 400V. Collector current: 0.3A. Housing: TO-92. Housing (according to data sheet): TO-92 (ammo pak). Collector/emitter voltage Vceo: 400V. Cost): 7pF. Semiconductor material: silicon. FT: 50 MHz. Function: VIDEO amp.. Max hFE gain: 50. Minimum hFE gain: 40. Equivalents: KSP44, CMPSA44. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 500V. Saturation voltage VCE(sat): 400mV. Maximum saturation voltage VCE(sat): 750mV. Vebo: 6V. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-92, 5mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 5mA. RoHS: no. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSH10. Collector-emitter voltage Uceo [V]: 25V. Cutoff frequency ft [MHz]: 650 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 0.5A, TO-92, TO-92M ( 9mm ), 300V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 300V. Cost): 3pF. Semiconductor material: silicon. FT: 50 MHz. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Function: hFE 25...40. Quantity per case: 1. Spec info: One Watt High Voltage Transistor. BE diode: no. CE diode: no