NPN bipolar transistors

NPN transistor, 0.2A, SOT-23 ( TO-236 ), SOT-23, 40V. Collector current: 0.2A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 500 MHz. Function: High Speed ​​Switching. Pd (Power Dissipation, Max): 0.25W. Spec info: screen printing/SMD code P1J, T1J. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 15V

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23, 40V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 40V. BE diode: no. C(in): 30pF. Cost): 8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: High Speed ​​Switching. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 0.8A. Marking on the case: p2X, t2X, W2X. Pd (Power Dissipation, Max): 0.25W. Spec info: screen printing/SMD code P2X, T2X, W2X, complementary transistor (pair) PMBT4401. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 0.75V. Vebo: 6V

NPN transistor, 0.5A, TO-92, TO-92, 75V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 75V. BE diode: no. Cost): 19pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: General Purpose Amplifier. Spec info: hFE 80...450. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 45V

NPN transistor, 0.5A, TO-92, TO-92, 75V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 75V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: General Purpose Amplifier. Spec info: hFE 240...600. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 45V

NPN transistor, 0.6A, TO-92, TO-92, 40V. Collector current: 0.6A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 75pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: General Purpose Amplifier. Max hFE gain: 300. Minimum hFE gain: 35. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V

NPN transistor, PCB soldering (SMD), SOT-363, 100mA. Housing: PCB soldering (SMD). Housing: SOT-363. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: pair of NPN and PNP transistors. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: D*2. Collector-emitter voltage Uceo [V]: 50V. Cutoff frequency ft [MHz]: 180 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23, 50V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 50V. Cost): 100pF. Quantity per case: 1. Semiconductor material: silicon. Function: DTR.. Pd (Power Dissipation, Max): 0.2W. Spec info: screen printing/CMS code XJ. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN

NPN transistor, PCB soldering, ITO-218, 8A. Housing: PCB soldering. Housing: ITO-218. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: high voltage NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: S2000N. Collector-emitter voltage Uceo [V]: 1.5 kV. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 8A, TO-247, TO-247F, 1500V. Collector current: 8A. Housing: TO-247. Housing (according to data sheet): TO-247F. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 9pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 15A, 160V. Collector current: 15A. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 35pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L, HI-FI Audio. Note: hFE 5000...20000. Pd (Power Dissipation, Max): 150W. Spec info: complementary transistor (pair) SAP15P. Type of transistor: NPN

NPN transistor, 15A, 160V. Collector current: 15A. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 35pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L, HI-FI Audio. Note: hFE 5000...20000. Pd (Power Dissipation, Max): 150W. Spec info: complementary transistor (pair) SAP15P. Type of transistor: NPN

NPN transistor, 15A, 400V. Collector current: 15A. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 125W. Type of transistor: NPN. Vcbo: 850V

NPN transistor, SOT23, 4.87k Ohms. Housing: SOT23. Collector-Emitter Voltage VCEO: 4.87k Ohms. Type: transistor for low power applications. Polarity: NPN. Power: 0.36W. Collector-Base Voltage VCBO: 4.87k Ohms. Mounting Type: SMD. Bandwidth MHz: 50MHz. DC Collector/Base Gain hFE min.: 25. Current Max 1: 0.5A. Series: SMBTA

Housing: SOT23. Frequency: 100MHz. Assembly/installation: SMD. Type of transistor: NPN. Polarity: bipolar. Voltage (collector - emitter): 25V. Collector current Ic [A]: 1.5A. Gain hfe: 200...350. Power: 300mW

NPN transistor, 1.5A, TO-92, TO-92 (Ammo-Pack), 25V. Collector current: 1.5A. Housing: TO-92. Housing (according to data sheet): TO-92 (Ammo-Pack). Collector/emitter voltage Vceo: 25V. BE diode: no. Cost): 9pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 200. Minimum hFE gain: 120. Marking on the case: S8050 C. Pd (Power Dissipation, Max): 1W. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 40V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 6V

NPN transistor, 0.5A, TO-92, TO-92, 20V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. BE diode: no. Cost): 28pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: Class B Push-pull Operation. Max hFE gain: 135. Minimum hFE gain: 96. Pd (Power Dissipation, Max): 0.625W. Spec info: excellent hFE linearity. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.16V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 270 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.45W. Type of transistor: NPN

NPN transistor, 4A, TO-220, TO-220AB, 400V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. BE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast switching. Max hFE gain: 32. Minimum hFE gain: 15. Ic(pulse): 8A. Marking on the case: 13005A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V

NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30. Minimum hFE gain: 16. Ic(pulse): 16A. Marking on the case: 13007A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 350 ns. Tf(min): 40 ns. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Vebo: 9V

NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. BE resistor: 50. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 15...28. Marking on the case: ST13009L. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: ST13009L. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 700V

NPN transistor. BE diode: no. Cost): 122pF. CE diode: no. Quantity per case: 1

NPN transistor, 1.5A, SOT-223 ( TO-226 ), SOT-223, 400V. Collector current: 1.5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast-switching power transistor. Max hFE gain: 32. Minimum hFE gain: 4. Ic(pulse): 3A. Marking on the case: N83003. Number of terminals: 3. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Spec info: complementary transistor (pair) STN93003. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V

NPN transistor, 5A, SOT-223 ( TO-226 ), SOT-223, 60V. Collector current: 5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 215pF. CE diode: no. Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: Low voltage fast-switching NPN power transistor. Max hFE gain: 350. Minimum hFE gain: 30. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.32V. Vebo: 7V

NPN transistor, 1A, TO-92, TO-92, 700V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: HIGH SWITCH. Pd (Power Dissipation, Max): 1.5W. Spec info: High-Speed. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 7A, ISOWATT218, ISOWATT218, 700V. Collector current: 7A. Housing: ISOWATT218. Housing (according to data sheet): ISOWATT218. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast switching. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V