NPN bipolar transistors

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 1pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 0.55pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 7.5. Minimum hFE gain: 5.5. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.25us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Vebo: 10V

NPN transistor, 12A, ISOWATT218FX, TO-218-FX, 700V. Collector current: 12A. Housing: ISOWATT218FX. Housing (according to data sheet): TO-218-FX. Collector/emitter voltage Vceo: 700V. BE diode: no. Cost): 4pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: FAST-SWITCH. Max hFE gain: 7. Minimum hFE gain: 4.5. Ic(pulse): 18A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 58W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 2.6us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.8V. Vebo: 9V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 700V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: FAST-SWITCH. Max hFE gain: 18. Minimum hFE gain: 5. Ic(pulse): 16A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 58W. RoHS: yes. Spec info: ICM--16A (tp=5ms). Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.3V. Vebo: 7V

NPN transistor, 14A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V. Collector current: 14A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 1.6pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Ic(pulse): 21A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Vebo: 9V

NPN transistor, 20A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 450V. Collector current: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Collector/emitter voltage Vceo: 450V. BE diode: no. Cost): 2.5pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: 400. Minimum hFE gain: 40. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 175W. Spec info: Q1 BE 100 Ohms, Q2 BE 15 Ohms. Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 650V. Saturation voltage VCE(sat): 2V. Vebo: 8V

NPN transistor, 50A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 400V. Collector current: 50A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 4pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 25. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 60A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 250V. Collector current: 60A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 7pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 75...1000. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

ROHS: Yes. Housing: TO3. Power: 200W. Assembly/installation: THT. Transistor type: Darlington transistor. Polarity: bipolar. Voltage (collector - emitter): 120V. Collector current Ic [A]: 30A

NPN transistor, 30A, TO-3 ( TO-204 ), TO-3 ( TO-204 ), 120V. Collector current: 30A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Collector/emitter voltage Vceo: 120V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): 4pF. Cost): TO-204AA. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Minimum hFE gain: 1000. Ic(pulse): +200°C. Note: hFE 1000 (IC=20Adc, VCE=5Vdc). Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) MJ11015. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN transistor, 50A, TO-3 ( TO-204 ), TO-3 ( TO-204 ), 120V. Collector current: 50A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 1000 (IC=25Adc, VCE=5Vdc, RBE=1K). Max hFE gain: 18000. Minimum hFE gain: 1000. Ic(pulse): 100A. Pd (Power Dissipation, Max): 300W. Spec info: complementary transistor (pair) MJ11033. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V

NPN transistor, PCB soldering, TO-3, 50A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 50A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ11032G. Collector-emitter voltage Uceo [V]: 120V. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C

NPN transistor, PCB soldering, TO-3, 20A, TO-3 ( TO-204 ), TO-3, 140V. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 140V. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ15003G. Collector-emitter voltage Uceo [V]: 140V. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. Spec info: complementary transistor (pair) MJ15004. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 140V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. BE resistor: 70. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Pd (Power Dissipation, Max): 180W. Spec info: Motorola. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V

NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. BE resistor: 70. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Max hFE gain: 70. Minimum hFE gain: 10. Number of terminals: 2. Pd (Power Dissipation, Max): 180W. RoHS: yes. Spec info: complementary transistor (pair) MJ15016. Assembly/installation: PCB through-hole mounting. Tf(max): 6us. Tf(min): 4us. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 200V. Saturation voltage VCE(sat): 1.1V. Vebo: 7V

NPN transistor, 16A, TO-3 ( TO-204 ), TO-3, 200V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Pd (Power Dissipation, Max): 250W. Spec info: complementary transistor (pair) MJ15023. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 350V

NPN transistor, 16A, TO-3 ( TO-204 ), TO-3, 200V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 200V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ15023. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 350V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN transistor, 16A, TO-3 ( TO-204 ), TO-3, 250V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ15025. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN transistor, PCB soldering, TO-3, 16A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 16A. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ15024G. Collector-emitter voltage Uceo [V]: 250V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, PCB soldering, TO-3, 16A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 16A. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ21194G. Collector-emitter voltage Uceo [V]: 250V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, 16A, TO-3 ( TO-204 ), TO-3 ( TO-204AA ), 250V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204AA ). Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 2pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ21195. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V

NPN transistor, 30A, TO-3 ( TO-204 ), TO-3, 100V. Collector current: 30A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 100V. BE diode: no. C(in): 30pF. Cost): 8.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Number of terminals: 2. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-3, 30A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 30A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ802G. Collector-emitter voltage Uceo [V]: 90V. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, PCB soldering (SMD), D-PAK, 8A. Housing: PCB soldering (SMD). Housing: D-PAK. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J44H11. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 85 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), D-PAK, 8A. Housing: PCB soldering (SMD). Housing: D-PAK. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J44H11. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 85 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C