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Semiconductors Transistors
NPN bipolar transistors

NPN bipolar transistors

1016 products available
Products per page :
Quantity in stock : 110
MJE15030G

MJE15030G

NPN transistor, 8A, TO-220, TO-220AB, 150V. Collector current: 8A. Housing: TO-220. Housing (accordi...
MJE15030G
NPN transistor, 8A, TO-220, TO-220AB, 150V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 150V. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) MJE15031G. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. BE diode: no. CE diode: no. Quantity per case: 1
MJE15030G
NPN transistor, 8A, TO-220, TO-220AB, 150V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 150V. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) MJE15031G. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. BE diode: no. CE diode: no. Quantity per case: 1
Set of 1
2.46$ VAT incl.
(2.46$ excl. VAT)
2.46$
Quantity in stock : 463
MJE15032G

MJE15032G

NPN transistor, PCB soldering, TO-220, 8A, TO-220AB, 250V. Housing: PCB soldering. Housing: TO-220. ...
MJE15032G
NPN transistor, PCB soldering, TO-220, 8A, TO-220AB, 250V. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 8A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 250V. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE15032G. Collector-emitter voltage Uceo [V]: 250V. Cutoff frequency ft [MHz]: 30 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) MJE15033. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V
MJE15032G
NPN transistor, PCB soldering, TO-220, 8A, TO-220AB, 250V. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 8A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 250V. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE15032G. Collector-emitter voltage Uceo [V]: 250V. Cutoff frequency ft [MHz]: 30 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) MJE15033. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V
Set of 1
2.66$ VAT incl.
(2.66$ excl. VAT)
2.66$
Quantity in stock : 53
MJE15034G

MJE15034G

NPN transistor, 4A, TO-220, TO-220AB, 350V. Collector current: 4A. Housing: TO-220. Housing (accordi...
MJE15034G
NPN transistor, 4A, TO-220, TO-220AB, 350V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 350V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE=100 (Min) @ IC=0.5Adc. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) MJE15035G. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
MJE15034G
NPN transistor, 4A, TO-220, TO-220AB, 350V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 350V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE=100 (Min) @ IC=0.5Adc. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) MJE15035G. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
Set of 1
2.46$ VAT incl.
(2.46$ excl. VAT)
2.46$
Quantity in stock : 485
MJE18004

MJE18004

NPN transistor, 5A, TO-220, TO-220AB, 450V. Collector current: 5A. Housing: TO-220. Housing (accordi...
MJE18004
NPN transistor, 5A, TO-220, TO-220AB, 450V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 450V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 34. Minimum hFE gain: 12. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 400us. Tf(min): 70us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V
MJE18004
NPN transistor, 5A, TO-220, TO-220AB, 450V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 450V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 34. Minimum hFE gain: 12. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 400us. Tf(min): 70us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V
Set of 1
1.43$ VAT incl.
(1.43$ excl. VAT)
1.43$
Quantity in stock : 211
MJE18004G

MJE18004G

NPN transistor, PCB soldering, TO-220, 5A. Housing: PCB soldering. Housing: TO-220. Collector curren...
MJE18004G
NPN transistor, PCB soldering, TO-220, 5A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 5A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE18004G. Collector-emitter voltage Uceo [V]: 450V. Cutoff frequency ft [MHz]: 13 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
MJE18004G
NPN transistor, PCB soldering, TO-220, 5A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 5A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE18004G. Collector-emitter voltage Uceo [V]: 450V. Cutoff frequency ft [MHz]: 13 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
1.96$ VAT incl.
(1.96$ excl. VAT)
1.96$
Quantity in stock : 1
MJE18006

MJE18006

NPN transistor, 6A, 450V. Collector current: 6A. Collector/emitter voltage Vceo: 450V. BE diode: no....
MJE18006
NPN transistor, 6A, 450V. Collector current: 6A. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: SMPS. Pd (Power Dissipation, Max): 100W. Spec info: SWITCHMODE. Type of transistor: NPN. Vcbo: 1000V
MJE18006
NPN transistor, 6A, 450V. Collector current: 6A. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: SMPS. Pd (Power Dissipation, Max): 100W. Spec info: SWITCHMODE. Type of transistor: NPN. Vcbo: 1000V
Set of 1
1.74$ VAT incl.
(1.74$ excl. VAT)
1.74$
Quantity in stock : 11
MJE18008

MJE18008

NPN transistor, 8A, TO-220, TO-220AB, 450V. Collector current: 8A. Housing: TO-220. Housing (accordi...
MJE18008
NPN transistor, 8A, TO-220, TO-220AB, 450V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 450V. BE diode: no. C(in): 1750pF. Cost): 100pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 13MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 14. Minimum hFE gain: 34. Ic(pulse): 16A. Pd (Power Dissipation, Max): 120W. RoHS: yes. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.6V
MJE18008
NPN transistor, 8A, TO-220, TO-220AB, 450V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 450V. BE diode: no. C(in): 1750pF. Cost): 100pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 13MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 14. Minimum hFE gain: 34. Ic(pulse): 16A. Pd (Power Dissipation, Max): 120W. RoHS: yes. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.6V
Set of 1
3.39$ VAT incl.
(3.39$ excl. VAT)
3.39$
Quantity in stock : 30
MJE200G

MJE200G

NPN transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V. Collector current: 5A. Housing: TO-126 (TO...
MJE200G
NPN transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V. Collector current: 5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 80pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Max hFE gain: 180. Minimum hFE gain: 45. Pd (Power Dissipation, Max): 15W. Spec info: complementary transistor (pair) MJE210. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Vebo: 8V
MJE200G
NPN transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V. Collector current: 5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 80pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Max hFE gain: 180. Minimum hFE gain: 45. Pd (Power Dissipation, Max): 15W. Spec info: complementary transistor (pair) MJE210. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Vebo: 8V
Set of 1
1.77$ VAT incl.
(1.77$ excl. VAT)
1.77$
Quantity in stock : 162
MJE243G

MJE243G

NPN transistor, PCB soldering, TO-225, 4mA. Housing: PCB soldering. Housing: TO-225. Collector curre...
MJE243G
NPN transistor, PCB soldering, TO-225, 4mA. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4mA. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE243G. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: 40 MHz. Maximum dissipation Ptot [W]: 0.015W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
MJE243G
NPN transistor, PCB soldering, TO-225, 4mA. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4mA. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE243G. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: 40 MHz. Maximum dissipation Ptot [W]: 0.015W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
0.85$ VAT incl.
(0.85$ excl. VAT)
0.85$
Quantity in stock : 187
MJE3055T

MJE3055T

NPN transistor, PCB soldering, TO-220AB, 10A. Housing: PCB soldering. Housing: TO-220AB. Collector c...
MJE3055T
NPN transistor, PCB soldering, TO-220AB, 10A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE3055T. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
MJE3055T
NPN transistor, PCB soldering, TO-220AB, 10A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE3055T. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
1.63$ VAT incl.
(1.63$ excl. VAT)
1.63$
Quantity in stock : 95
MJE3055T-CDIL

MJE3055T-CDIL

NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (accord...
MJE3055T-CDIL
NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: for Hi-fi audio amplifiers and switching regulators. Max hFE gain: 100. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) MJE3055T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V
MJE3055T-CDIL
NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: for Hi-fi audio amplifiers and switching regulators. Max hFE gain: 100. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) MJE3055T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V
Set of 1
0.85$ VAT incl.
(0.85$ excl. VAT)
0.85$
Quantity in stock : 46
MJE3055T-FAI

MJE3055T-FAI

NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (accord...
MJE3055T-FAI
NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) MJE2955T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Vebo: 5V
MJE3055T-FAI
NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) MJE2955T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Vebo: 5V
Set of 1
1.03$ VAT incl.
(1.03$ excl. VAT)
1.03$
Quantity in stock : 465
MJE340

MJE340

NPN transistor, PCB soldering, SOT-32, 500mA. Housing: PCB soldering. Housing: SOT-32. Collector cur...
MJE340
NPN transistor, PCB soldering, SOT-32, 500mA. Housing: PCB soldering. Housing: SOT-32. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-126. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340. Collector-emitter voltage Uceo [V]: 300V. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
MJE340
NPN transistor, PCB soldering, SOT-32, 500mA. Housing: PCB soldering. Housing: SOT-32. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-126. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340. Collector-emitter voltage Uceo [V]: 300V. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
1.57$ VAT incl.
(1.57$ excl. VAT)
1.57$
Quantity in stock : 64
MJE340-ONS

MJE340-ONS

NPN transistor, 0.5A, TO-126 (TO-225, SOT-32), TO-126 ( TO-225 ), 500V. Collector current: 0.5A. Hou...
MJE340-ONS
NPN transistor, 0.5A, TO-126 (TO-225, SOT-32), TO-126 ( TO-225 ), 500V. Collector current: 0.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126 ( TO-225 ). Collector/emitter voltage Vceo: 500V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L, VID.. Equivalents: KSE340. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE350. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 300V
MJE340-ONS
NPN transistor, 0.5A, TO-126 (TO-225, SOT-32), TO-126 ( TO-225 ), 500V. Collector current: 0.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126 ( TO-225 ). Collector/emitter voltage Vceo: 500V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L, VID.. Equivalents: KSE340. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE350. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 300V
Set of 1
0.97$ VAT incl.
(0.97$ excl. VAT)
0.97$
Quantity in stock : 127
MJE340-ST

MJE340-ST

NPN transistor, 0.5A, TO-126F, TO-225, 300V. Collector current: 0.5A. Housing: TO-126F. Housing (acc...
MJE340-ST
NPN transistor, 0.5A, TO-126F, TO-225, 300V. Collector current: 0.5A. Housing: TO-126F. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE350. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 3V
MJE340-ST
NPN transistor, 0.5A, TO-126F, TO-225, 300V. Collector current: 0.5A. Housing: TO-126F. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE350. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 3V
Set of 1
0.92$ VAT incl.
(0.92$ excl. VAT)
0.92$
Quantity in stock : 1211
MJE340G

MJE340G

NPN transistor, PCB soldering, TO-225, 500mA. Housing: PCB soldering. Housing: TO-225. Collector cur...
MJE340G
NPN transistor, PCB soldering, TO-225, 500mA. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340G. Collector-emitter voltage Uceo [V]: 300V. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
MJE340G
NPN transistor, PCB soldering, TO-225, 500mA. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340G. Collector-emitter voltage Uceo [V]: 300V. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
1.31$ VAT incl.
(1.31$ excl. VAT)
1.31$
Quantity in stock : 22
MJE5742

MJE5742

NPN transistor, 8A, TO-220, TO-220AB, 800V. Collector current: 8A. Housing: TO-220. Housing (accordi...
MJE5742
NPN transistor, 8A, TO-220, TO-220AB, 800V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 800V. BE diode: no. BE resistor: 100 Ohms (R1), 50 Ohms (R2). CE diode: yes. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 400. Minimum hFE gain: 50. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(min): 2us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 2V
MJE5742
NPN transistor, 8A, TO-220, TO-220AB, 800V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 800V. BE diode: no. BE resistor: 100 Ohms (R1), 50 Ohms (R2). CE diode: yes. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 400. Minimum hFE gain: 50. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(min): 2us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 2V
Set of 1
2.59$ VAT incl.
(2.59$ excl. VAT)
2.59$
Quantity in stock : 16
MJE721

MJE721

NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. BE diode: n...
MJE721
NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 1000pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN
MJE721
NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 1000pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN
Set of 1
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 182
MJE800G

MJE800G

NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector curren...
MJE800G
NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE800G. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
MJE800G
NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE800G. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
0.75$ VAT incl.
(0.75$ excl. VAT)
0.75$
Quantity in stock : 41
MJE803

MJE803

NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector curren...
MJE803
NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: no. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE803. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
MJE803
NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: no. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE803. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
0.95$ VAT incl.
(0.95$ excl. VAT)
0.95$
Out of stock
MJF18004G

MJF18004G

NPN transistor, 1000V, 5A, TO-220-F. Collector-Emitter Voltage VCEO: 1000V. Collector current: 5A. H...
MJF18004G
NPN transistor, 1000V, 5A, TO-220-F. Collector-Emitter Voltage VCEO: 1000V. Collector current: 5A. Housing: TO-220-F. Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Power: 35W. Max frequency: 13MHz
MJF18004G
NPN transistor, 1000V, 5A, TO-220-F. Collector-Emitter Voltage VCEO: 1000V. Collector current: 5A. Housing: TO-220-F. Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Power: 35W. Max frequency: 13MHz
Set of 1
2.94$ VAT incl.
(2.94$ excl. VAT)
2.94$
Quantity in stock : 28
MJF18008

MJF18008

NPN transistor, 8A, TO-220FP, TO-220F, 450V. Collector current: 8A. Housing: TO-220FP. Housing (acco...
MJF18008
NPN transistor, 8A, TO-220FP, TO-220F, 450V. Collector current: 8A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. BE diode: no. Cost): 80pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: (F). Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V
MJF18008
NPN transistor, 8A, TO-220FP, TO-220F, 450V. Collector current: 8A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. BE diode: no. Cost): 80pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: (F). Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V
Set of 1
2.76$ VAT incl.
(2.76$ excl. VAT)
2.76$
Quantity in stock : 18
MJF18204

MJF18204

NPN transistor, 5A, TO-220FP, TO-220F, 600V. Collector current: 5A. Housing: TO-220FP. Housing (acco...
MJF18204
NPN transistor, 5A, TO-220FP, TO-220F, 600V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 600V. BE diode: no. BE resistor: 50. Cost): 156pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: switching circuits. Max hFE gain: 35. Minimum hFE gain: 18. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 175 ns. Tf(min): 110 ns. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 1200V. Saturation voltage VCE(sat): 0.83V. Vebo: 10V
MJF18204
NPN transistor, 5A, TO-220FP, TO-220F, 600V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 600V. BE diode: no. BE resistor: 50. Cost): 156pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: switching circuits. Max hFE gain: 35. Minimum hFE gain: 18. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 175 ns. Tf(min): 110 ns. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 1200V. Saturation voltage VCE(sat): 0.83V. Vebo: 10V
Set of 1
2.44$ VAT incl.
(2.44$ excl. VAT)
2.44$
Quantity in stock : 5
MJL16128

MJL16128

NPN transistor, 15A, 650V. Collector current: 15A. Collector/emitter voltage Vceo: 650V. BE diode: n...
MJL16128
NPN transistor, 15A, 650V. Collector current: 15A. Collector/emitter voltage Vceo: 650V. BE diode: no. Cost): 2.3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: NF-L, TO-264. Pd (Power Dissipation, Max): 170W. Spec info: TO-3PBL. Type of transistor: NPN. Vcbo: 1500V
MJL16128
NPN transistor, 15A, 650V. Collector current: 15A. Collector/emitter voltage Vceo: 650V. BE diode: no. Cost): 2.3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: NF-L, TO-264. Pd (Power Dissipation, Max): 170W. Spec info: TO-3PBL. Type of transistor: NPN. Vcbo: 1500V
Set of 1
11.28$ VAT incl.
(11.28$ excl. VAT)
11.28$
Quantity in stock : 139
MJL21194

MJL21194

NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( T...
MJL21194
NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL21193. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V
MJL21194
NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL21193. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V
Set of 1
8.73$ VAT incl.
(8.73$ excl. VAT)
8.73$

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