NPN transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V - MJE200G

Quantity	excl. VAT	VAT incl.
1 - 4	1.77$	1.77$
5 - 9	1.68$	1.68$
10 - 24	1.63$	1.63$
25 - 30	1.60$	1.60$

Quantity	U.P
1 - 4	1.77$	1.77$
5 - 9	1.68$	1.68$
10 - 24	1.63$	1.63$
25 - 30	1.60$	1.60$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 30

Set of 1

NPN transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V - MJE200G. NPN transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V. Collector current: 5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 80pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Max hFE gain: 180. Minimum hFE gain: 45. Pd (Power Dissipation, Max): 15W. Spec info: complementary transistor (pair) MJE210. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Vebo: 8V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 07/06/2025, 09:25.

Technical documentation

NPN transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V - MJE200G

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