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Semiconductors Transistors NPN bipolar transistors

NPN transistor, PCB soldering, TO-220AB, 10A, 10A, TO-220, TO-220AB, 60V - MJE3055T

NPN transistor, PCB soldering, TO-220AB, 10A, 10A, TO-220, TO-220AB, 60V - MJE3055T
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Quantity excl. VAT VAT incl.
1 - 4 1.17$ 1.17$
5 - 9 1.11$ 1.11$
10 - 24 1.08$ 1.08$
25 - 49 1.05$ 1.05$
50 - 99 1.03$ 1.03$
100 - 249 1.04$ 1.04$
250 - 254 1.06$ 1.06$
Quantity U.P
1 - 4 1.17$ 1.17$
5 - 9 1.11$ 1.11$
10 - 24 1.08$ 1.08$
25 - 49 1.05$ 1.05$
50 - 99 1.03$ 1.03$
100 - 249 1.04$ 1.04$
250 - 254 1.06$ 1.06$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 254
Set of 1

NPN transistor, PCB soldering, TO-220AB, 10A, 10A, TO-220, TO-220AB, 60V - MJE3055T. NPN transistor, PCB soldering, TO-220AB, 10A, 10A, TO-220, TO-220AB, 60V. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 10A. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE3055T. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Spec info: complementary transistor (pair) MJE2955T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Vebo: 5V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 07/06/2025, 09:25.

Technical documentation

Equivalent products :

Quantity in stock : 46
MJE3055T-FAI

MJE3055T-FAI

NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (accord...
MJE3055T-FAI
NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) MJE2955T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Vebo: 5V
MJE3055T-FAI
NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) MJE2955T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Vebo: 5V
Set of 1
1.03$ VAT incl.
(1.03$ excl. VAT)
1.03$

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