NPN bipolar transistors

NPN transistor, 0.2A, 45V. Collector current: 0.2A. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Pd (Power Dissipation, Max): 0.3W. Type of transistor: NPN

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: BC237/25. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC237BG. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 210 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-92, 800mA, TO-92, 45V. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-40. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Spec info: complementary transistor (pair) BC327-40. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-40. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 210 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-16. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN transistor, 0.8A, TO-92, TO-92Ammo-Pack, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92Ammo-Pack. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 630. Minimum hFE gain: 250. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-40. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN transistor, 1A, TO-92, TO-92, 20V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. BE diode: no. Cost): 40pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 400. Minimum hFE gain: 63. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Maximum saturation voltage VCE(sat): 0.5V

NPN transistor, 1A, TO-92, TO-92, 20V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 375. Minimum hFE gain: 85. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Spec info: complementary transistor (pair) BC369. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 32V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 1A, TO-92, TO-92 ( Ammo Pack ), 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 80V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 160000. Minimum hFE gain: 8000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: VEBO 12V. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 1V

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 1A, TO-92, TO-92, 30 v. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 200MHz. Minimum hFE gain: 30000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC516. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 40V. Maximum saturation voltage VCE(sat): 1V. Vebo: 10V

NPN transistor, PCB soldering, TO-92, 1.2A. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 1.2A. RoHS: yes. Component family: Darlington NPN Transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC517. Collector-emitter voltage Uceo [V]: 30 v. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-92, 1A. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC517. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 1.2A, TO-92, TO-92 ( Ammo Pack ), 30 v. Collector current: 1.2A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 200MHz. Minimum hFE gain: 30000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC516. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 40V. Maximum saturation voltage VCE(sat): 1V. Vebo: 10V

NPN transistor, 0.1A, TO-92, TO-92, 65V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. BE diode: no. CE diode: no. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 220. Minimum hFE gain: 90. Ic(pulse): 0.2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC556A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Vebo: 6V

NPN transistor, TO-92, 0.1A, TO-92, 65V. Housing: TO-92. Collector current: 0.1A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 450. Minimum hFE gain: 200. Ic(pulse): 0.2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC556B. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Vebo: 6V

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC546B. Collector-emitter voltage Uceo [V]: 65V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 100mA, TO-92, TO-92, 65V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.25V. Vebo: 6V

NPN transistor, 100mA, TO-92, TO-92 ( Ammo Pack ), 45V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 220. Minimum hFE gain: 90. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: complementary transistor (pair) BC557A. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar-Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V