NPN bipolar transistors

NPN transistor, 4A, 100V. Collector current: 4A. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Pd (Power Dissipation, Max): 30W. Type of transistor: NPN. Spec info: complementary transistor (pair) 2SB682

NPN transistor, 8A, TO-3P ( TO-218 SOT-93 ), TO-3P, 120V. Collector current: 8A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Function: audio power amplifier. Max hFE gain: 160. Minimum hFE gain: 55. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Vebo: 5V. Spec info: complementary transistor (pair) 2SB688. BE diode: no. CE diode: no

NPN transistor, 6A, 600V. Collector current: 6A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 0.7A, TO-92, 25V. Collector current: 0.7A. Housing: TO-92. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.6W. Type of transistor: NPN

NPN transistor, PCB soldering, TO-220AB, 3A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 3A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 25W

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, 6A, 120V. Collector current: 6A. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Note: B=1000. Pd (Power Dissipation, Max): 40W. Type of transistor: NPN

NPN transistor, 6A, 120V. Collector current: 6A. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF/SL. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN

NPN transistor, 1A, 60V. Collector current: 1A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 30W. Type of transistor: NPN

NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: complementary transistor (pair) 2SB764. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-3, 6A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 6A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SD871. Collector-emitter voltage Uceo [V]: 1500V/600V. Maximum dissipation Ptot [W]: 50W

NPN transistor, 3A, 30 v. Collector current: 3A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Io-sat. Pd (Power Dissipation, Max): 0.75W. Type of transistor: NPN

NPN transistor, 3A, TO-220, TO-220, 60V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 3A, TO-220, TO-220, 60V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 3A, TO-126, 30 v, TO-126 (TO-225, SOT-32). Collector current: 3A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 30 v. Housing: TO-126 (TO-225, SOT-32). Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 400. Minimum hFE gain: 60. Ic(pulse): 7A. Marking on the case: D882. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) 2SB772. BE diode: no. CE diode: no

NPN transistor, PCB soldering, M31/J, 7A. Housing: PCB soldering. Housing: M31/J. Collector current Ic [A], max.: 7A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 330V/200V. Maximum dissipation Ptot [W]: 70W

NPN transistor, 2A, TO-126, 40V, TO-126 (TO-225, SOT-32). Collector current: 2A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 40V. Housing: TO-126 (TO-225, SOT-32). Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: hFE 4000. Pd (Power Dissipation, Max): 5W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: TO-126

NPN transistor, 0.02A, 120V. Collector current: 0.02A. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Pd (Power Dissipation, Max): 0.4W. Type of transistor: NPN. Function: NF

NPN transistor, 5A, TO-92, TO-92, 20V. Collector current: 5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. Cost): 50pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: AF output amplifier. Max hFE gain: 600. Minimum hFE gain: 340. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.35V. Vebo: 7V. BE diode: no. CE diode: no

NPN transistor, PCB soldering, D8/C, 500mA. Housing: PCB soldering. Housing: D8/C. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 25V/20V. Maximum dissipation Ptot [W]: 0.6W

NPN transistor, 12A, TO-220, TO-220C, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220C. Collector/emitter voltage Vceo: 400V. Darlington transistor?: no. Semiconductor material: silicon. FT: 4 MHz. Function: Fast-switching. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 24A. Marking on the case: D13009K. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.8V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1

NPN transistor, 12A, TO-3PN ( 2-16C1B ), TO-3PN, 400V. Collector current: 12A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 400V. Darlington transistor?: no. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 24A. Marking on the case: D209L. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Tf(min): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Number of terminals: 3. Quantity per case: 1

NPN transistor, 1.5A, TO-126F, TO-126F, 490V. Collector current: 1.5A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 490V. Darlington transistor?: no. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 20. Minimum hFE gain: 16. Ic(pulse): 3A. Marking on the case: 4202BD. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Tf(min): 0.7us. Type of transistor: NPN. Vcbo: 800V. Saturation voltage VCE(sat): 0.18V. Vebo: 13V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: yes

NPN transistor, PCB soldering (SMD), SOT-323, 40mA. Housing: PCB soldering (SMD). Housing: SOT-323. Collector current Ic [A], max.: 40mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 32. Collector-emitter voltage Uceo [V]: 5.5V. Cutoff frequency ft [MHz]: 2.4GHz. Maximum dissipation Ptot [W]: 0.2W. Component family: high frequency NPN transistor

NPN transistor, 0.2A, TO-18 ( TO-206 ), TO-18, 45V. Collector current: 0.2A. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 45V. Resistor B: no. BE resistor: PCB soldering. C(in): TO-18. Cost): 4.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Max hFE gain: 450. Minimum hFE gain: 200. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 50V. Vebo: 6V. BE diode: no. CE diode: no