NPN bipolar transistors

NPN transistor, 0.1A, TO-92, TO-92, 45V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Max hFE gain: 450. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V. Spec info: complementary transistor (pair) BC560B. BE diode: no. CE diode: no

NPN transistor, 0.1A, TO-92, TO-92, 45V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 420...800 (IC=2mAdc, VCE=5Vdc). Max hFE gain: 800. Minimum hFE gain: 420. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Spec info: complementary transistor (pair) BC560C. BE diode: no. CE diode: no

NPN transistor, TO-92, 0.1A, TO-92 3L (Ammo Pack), 45V. Housing: TO-92. Collector current: 0.1A. Housing (according to data sheet): TO-92 3L (Ammo Pack). Collector/emitter voltage Vceo: 45V. RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): 9pF. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 420...800 (IC=2mAdc, VCE=5Vdc). Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): +150°C. Equivalents: BC550CG, BC550CBU. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Spec info: complementary transistor (pair) BC560C. BE diode: no. CE diode: no

NPN transistor, 1A, TO-92, TO-92, 45V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. C(in): 50pF. Cost): 7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Max hFE gain: 250. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. BE diode: no. CE diode: no

NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. C(in): 50pF. Cost): 7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-92, 1A, TO-92, 80V. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 1A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. RoHS: yes. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC639. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Spec info: complementary transistor (pair) BC640

NPN transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Spec info: complementary transistor (pair) BC640-16. BE diode: no. CE diode: no

NPN transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. C(in): 50pF. Cost): 7pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) BC640-16. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-92, 1A. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 1A. RoHS: yes. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC639-16. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.83W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, PCB soldering, TO-92, 1A. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 1A. RoHS: yes. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC639-16. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.83W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 100V, 1A, TO-92. Collector-Emitter Voltage VCEO: 100V. Collector current: 1A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.8W. Max frequency: 100MHz

NPN transistor, 100V, 1A, TO-92. Collector-Emitter Voltage VCEO: 100V. Collector current: 1A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.8W. Max frequency: 50MHz

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Function: NF-TR. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 1A. Marking on the case: 6As. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: SMD 6As

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-TR. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 1A. Marking on the case: 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: SMD 6A

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23-3, 45V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. Collector/emitter voltage Vceo: 45V. Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-TR. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Marking on the case: 6B. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: screen printing/SMD code 6B. BE diode: no. CE diode: no

NPN transistor, PCB soldering (SMD), SOT-23, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 800mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6B. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.31W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, PCB soldering (SMD), SOT-23, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 500mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6B. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. Cost): 10pF. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Function: NF-TR. Max hFE gain: 630. Minimum hFE gain: 250. Ic(pulse): 1A. Marking on the case: 6C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: screen printing/SMD code 6C. BE diode: no. CE diode: no

NPN transistor, PCB soldering (SMD), SOT-23, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 800mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6B. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.31W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23-3, 45V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. Collector/emitter voltage Vceo: 45V. Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-TR. Max hFE gain: 600. Minimum hFE gain: 250. Ic(pulse): 1A. Marking on the case: 6C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: SMD 6C. BE diode: no. CE diode: no

NPN transistor, PCB soldering (SMD), SOT-23, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 500mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6C. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, PCB soldering (SMD), SOT-23, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 800mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6g. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.31W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, PCB soldering (SMD), SOT-23, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 500mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6g. Collector-emitter voltage Uceo [V]: 25V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 0.1A, SOT-23 ( TO-236 ), TO-236AB, 65V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): TO-236AB. Collector/emitter voltage Vceo: 65V. C(in): 11pF. Cost): 2pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Max hFE gain: 450. Minimum hFE gain: 200. Marking on the case: 1B. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 80V. Vebo: 6V. Spec info: SMD 1B. BE diode: no. CE diode: no

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1B. Collector-emitter voltage Uceo [V]: 65V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor