NPN bipolar transistors

NPN transistor, 2A, 100V. Collector current: 2A. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: insulated package transistor. Note: >1000. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. CE diode: yes

NPN transistor, 3A, SMD, D-PAK TO-252, 50V. Collector current: 3A. Housing: SMD. Housing (according to data sheet): D-PAK TO-252. Collector/emitter voltage Vceo: 50V. Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High-Current switching. Max hFE gain: 560. Minimum hFE gain: 35. Ic(pulse): 6A. Pd (Power Dissipation, Max): 15W. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 60V. Vebo: 6V. Spec info: complementary transistor (pair) 2SB1202. BE diode: no. CE diode: no

NPN transistor, 8A, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V. Collector current: 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 400. Minimum hFE gain: 35. Ic(pulse): 12A. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Silicon Transistors'. Tf(max): 20 ns. Tf(min): 20 ns. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.2V. Vebo: 6V. Function: High-Current Switching, low-saturation voltage. Spec info: complementary transistor (pair) 2SB1204

NPN transistor, 4A, TO-220FP, TO-220ML, 60V. Collector current: 4A. Housing: TO-220FP. Housing (according to data sheet): TO-220ML. Collector/emitter voltage Vceo: 60V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: 'driver'. Max hFE gain: 5000. Minimum hFE gain: 2000. Ic(pulse): 6A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 70V. Saturation voltage VCE(sat): 0.9V. Spec info: 'Epitaxial Planar Silicon Darlington Transistor'

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 100W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, TO-3PML, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 5A. Housing (according to data sheet): TO-3PML. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Color TV Horizontal Deflection Output Amp.. Max hFE gain: 10. Minimum hFE gain: 5. Ic(pulse): 20A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V

NPN transistor, 3A, TO-220FP, TO-220F, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Low-Frequency Power Amplifier. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: complementary transistor (pair) 2SB1274

NPN transistor, 4A, 80V. Collector current: 4A. Collector/emitter voltage Vceo: 80V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: insulated package transistor. Minimum hFE gain: 3000. Note: =3000. Pd (Power Dissipation, Max): 30W. RoHS: yes. Type of transistor: NPN. Spec info: complementary transistor (pair) 2SB1342

NPN transistor, PCB soldering, M31/C, 6A. Housing: PCB soldering. Housing: M31/C. Collector current Ic [A], max.: 6A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 1500V/650V. Maximum dissipation Ptot [W]: 50W. Manufacturer's marking: silicon. Cutoff frequency ft [MHz]: 50W. Operating temperature range min (°C): 1500V. Operating temperature range max (°C): 650V

NPN transistor, 10A, 650V. Collector current: 10A. Collector/emitter voltage Vceo: 650V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1400V. Function: S-L TV/HA(F)

NPN transistor, 0.5A, TO-92, TO-92, 25V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Io-sat DC/DC. Max hFE gain: 350. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 2.5A, 1500V. Collector current: 2.5A. Collector/emitter voltage Vceo: 1500V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN

NPN transistor, 3A, TO-220FP, 2-10R1A, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Collector/emitter voltage Vceo: 60V. Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Marking on the case: D2012. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) 2SB1366. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-220FP, 3A, TO-220, TO-220, 80V. Housing: PCB soldering. Housing: TO-220FP. Collector current Ic [A], max.: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 80V. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 80V/60V. Maximum dissipation Ptot [W]: 30W. Manufacturer's marking: silicon. Cutoff frequency ft [MHz]: 3A. Operating temperature range min (°C): 30W. Operating temperature range max (°C): PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 3.5A, TO-3PF ( SOT399 / 2-16E3A ), 600V. Collector current: 3.5A. Housing: TO-3PF ( SOT399 / 2-16E3A ). Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. BE diode: no. CE diode: yes

NPN transistor, 3A, 100V. Collector current: 3A. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: Io-sat. Note: >500. Type of transistor: NPN

NPN transistor, 6A, 600V. Collector current: 6A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, 110V. Collector current: 10A. Collector/emitter voltage Vceo: 110V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 100W. Type of transistor: NPN

NPN transistor, 8A, TO-264 ( TOP-3L ), TOP-3L, 160V. Collector current: 8A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TOP-3L. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: Optimum for 120W Hi-Fi output. Max hFE gain: 20000. Minimum hFE gain: 3500. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple diffusion planar type darlington'. Tf(max): 1.2us. Tf(min): 1.2us. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN transistor, 0.3A, 30 v. Collector current: 0.3A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: TV-HA. Pd (Power Dissipation, Max): 0.25W. Type of transistor: NPN

NPN transistor, 3A, TO-3FP, 600V, TO-3PF (SOT399, 2-16E3A). Collector current: 3A. Housing (according to data sheet): TO-3FP. Collector/emitter voltage Vceo: 600V. Housing: TO-3PF (SOT399, 2-16E3A). Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Spec info: IBp=2A

NPN transistor, 3A, TO-220FP, TO-220F, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 50MHz. Function: Power amplification with high forward current. Max hFE gain: 1000. Minimum hFE gain: 500. Ic(pulse): 6A. Temperature: +150°C. Assembly/installation: PCB through-hole mounting. Technology: 2.37k Ohms. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V. BE diode: no. CE diode: no

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P ( MT-100 ), 150V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P ( MT-100 ). Collector/emitter voltage Vceo: 150V. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 55 MHz. Function: hFE 5000. Minimum hFE gain: 5000. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V. Spec info: complementary transistor (pair) 2SB1560. BE diode: no. CE diode: no

NPN transistor, 2A, SOT-89, SOT-89, 60V. Collector current: 2A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Function: S Io-sat. Note: screen printing/SMD code DT. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Spec info: complementary transistor (pair) 2SB1561

NPN transistor, 3A, TO-220FP, TO-220FN, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Max hFE gain: 320. Minimum hFE gain: 100. Ic(pulse): 6A. Marking on the case: D2394. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Vebo: 7V