NPN bipolar transistors

NPN transistor, 6A, TO-3P ( TO-218 SOT-93 ), SOT-93, 600V. Collector current: 6A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: 'CTV-HA' (insulated). Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 7A, 600V. Collector current: 7A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, 600V. Collector current: 10A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: 'CTV-HA' (insulated). Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1400V

NPN transistor, 3.5A, 600V. Collector current: 3.5A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 40W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 6A, 600V, TO-3PF (SOT399, 2-16E3A). Collector current: 6A. Collector/emitter voltage Vceo: 600V. Housing: TO-3PF (SOT399, 2-16E3A). Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 2A, 700V. Collector current: 2A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, TO-3P ( TO-218 SOT-93 ), 1500V. Collector current: 5A. Housing: TO-3P ( TO-218 SOT-93 ). Collector/emitter voltage Vceo: 1500V. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Max hFE gain: 15. Minimum hFE gain: 4. Ic(pulse): 17A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2V. Vebo: 6V

NPN transistor, 0.1A, 160V. Collector current: 0.1A. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. Function: NF/SL. Note: hFE 100...200. Type of transistor: NPN. Spec info: 2SD1609-C

NPN transistor, 2A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 50V. Collector current: 2A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 280. Minimum hFE gain: 140. Ic(pulse): 4A. Note: complementary transistor (pair) 2SB1123S. Marking on the case: DF. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Silicon Transistor'. Tf(max): 30 ns. Tf(min): 30 ns. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 1.5V. Vebo: 6V. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code DF. BE diode: no. CE diode: no

NPN transistor, 2A, 60V. Collector current: 2A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Note: hFE 200...400. Pd (Power Dissipation, Max): 0.5W. Type of transistor: NPN. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code DF, complementary transistor (pair) 2SB1123T. BE diode: no. CE diode: no

NPN transistor, 3A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 50V. Collector current: 3A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 280. Minimum hFE gain: 140. Ic(pulse): 6A. Marking on the case: DG. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Silicon Transistors'. Tf(max): 35 ns. Tf(min): 35 ns. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.35V. Vebo: 6V. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code DG

NPN transistor, 1.5A, SOT-89, SANYO PCP, 50V. Collector current: 1.5A. Housing: SOT-89. Housing (according to data sheet): SANYO PCP. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: high DC Current, Relay drivers, Lamp drivers. Max hFE gain: 4000. Minimum hFE gain: 3000. Ic(pulse): 3A. Marking on the case: DI. Pd (Power Dissipation, Max): 1.5W. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.9V. Vebo: 10V. Spec info: screen printing/SMD code DI, complementary transistor (pair) 2SB1126. BE diode: no. CE diode: no

NPN transistor, 2A, 30 v. Collector current: 2A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Note: hFE 3000...4000. Pd (Power Dissipation, Max): 1.5W. Type of transistor: NPN. Function: High DC Current, Relay drivers, Voltage regulation control. Spec info: screen printing/SMD code DJ

NPN transistor, 5A, SOT-89, SANYO--PCP, 60V. Collector current: 5A. Housing: SOT-89. Housing (according to data sheet): SANYO--PCP. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code DK, hFE 120...200

NPN transistor, 5A, SOT-89, SANYO--PCP, 20V. Collector current: 5A. Housing: SOT-89. Housing (according to data sheet): SANYO--PCP. Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 320. Minimum hFE gain: 180. Id(imp): 8A. Marking on the case: DK. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.5V. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code DK

NPN transistor, 3.5A, 800V. Collector current: 3.5A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 5A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 6A, 800V. Collector current: 6A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 32V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 32V. Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: bipolar transistor. Max hFE gain: 270. Minimum hFE gain: 120. Ic(pulse): 2A. Marking on the case: DAQ. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial planar type'. Type of transistor: NPN. Operating temperature: +55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.15V. Vebo: 5V. Spec info: screen printing/SMD code DAQ

NPN transistor, 7A, TO-220FP, TO-220ML, 50V. Collector current: 7A. Housing: TO-220FP. Housing (according to data sheet): TO-220ML. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: switching circuits. Max hFE gain: 280. Minimum hFE gain: 70. Id(imp): 12A. Note: complementary transistor (pair) 2SB1135. Pd (Power Dissipation, Max): 30W. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.4V. Vebo: 6V

NPN transistor, 12A, TO-220FP, TO-220ML, 50V. Collector current: 12A. Housing: TO-220FP. Housing (according to data sheet): TO-220ML. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: switching circuits. Max hFE gain: 280. Minimum hFE gain: 70. Id(imp): 15A. Note: complementary transistor (pair) 2SB1136. Pd (Power Dissipation, Max): 30W. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.4V. Vebo: 6V

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 100W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 2A, 40V. Collector current: 2A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-E-L. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Spec info: D-PAK (ROHM--CPT3)

NPN transistor, 3A, TO-220FP, 60V. Collector current: 3A. Housing: TO-220FP. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. BE diode: no. CE diode: no

NPN transistor, 1.5A, 160V. Collector current: 1.5A. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: NF/E (F). Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Spec info: complementary transistor (pair) 2SB1186A