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N-channel transistor, 30A, 0.1uA, 30A, TO-220, TO-220AB, 0.014 Ohms - P30N03A

N-channel transistor, 30A, 0.1uA, 30A, TO-220, TO-220AB, 0.014 Ohms - P30N03A
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 5.85$ 5.85$
2 - 2 5.55$ 5.55$
3 - 4 5.26$ 5.26$
5 - 7 4.97$ 4.97$
Quantity U.P
1 - 1 5.85$ 5.85$
2 - 2 5.55$ 5.55$
3 - 4 5.26$ 5.26$
5 - 7 4.97$ 4.97$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 7
Set of 1

N-channel transistor, 30A, 0.1uA, 30A, TO-220, TO-220AB, 0.014 Ohms - P30N03A. N-channel transistor, 30A, 0.1uA, 30A, TO-220, TO-220AB, 0.014 Ohms. ID (T=25°C): 30A. Idss: 0.1uA. Idss (max): 30A. Housing: TO-220. Housing (according to data sheet): TO-220AB. On-resistance Rds On: 0.014 Ohms. C(in): 860pF. Cost): 450pF. Channel type: N. Type of transistor: MOSFET. Id(imp): 60.4k Ohms. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 16 ns. Technology: Field Effect Transistor. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 19/04/2025, 23:25.

Equivalent products :

Quantity in stock : 16
2SK1358

2SK1358

N-channel transistor, 9A, 300uA, 1.1 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V. ID (T=25°C): 9A. I...
2SK1358
N-channel transistor, 9A, 300uA, 1.1 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V. ID (T=25°C): 9A. Idss (max): 300uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 900V. C(in): 1300pF. Cost): 180pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed, tr--25nS tf--20nS. Id(imp): 27A. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 40 ns. Technology: Field Effect Transistor MOS II.5. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V
2SK1358
N-channel transistor, 9A, 300uA, 1.1 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V. ID (T=25°C): 9A. Idss (max): 300uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 900V. C(in): 1300pF. Cost): 180pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed, tr--25nS tf--20nS. Id(imp): 27A. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 40 ns. Technology: Field Effect Transistor MOS II.5. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V
Set of 1
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