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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 20A, 29A, 250uA, 0.04 Ohms, TO-220, TO-220AB, 55V - IRFZ34N

N-channel transistor, 20A, 29A, 250uA, 0.04 Ohms, TO-220, TO-220AB, 55V - IRFZ34N
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.31$ 1.31$
5 - 9 1.24$ 1.24$
10 - 24 1.18$ 1.18$
25 - 49 1.11$ 1.11$
50 - 77 1.09$ 1.09$
Quantity U.P
1 - 4 1.31$ 1.31$
5 - 9 1.24$ 1.24$
10 - 24 1.18$ 1.18$
25 - 49 1.11$ 1.11$
50 - 77 1.09$ 1.09$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 77
Set of 1

N-channel transistor, 20A, 29A, 250uA, 0.04 Ohms, TO-220, TO-220AB, 55V - IRFZ34N. N-channel transistor, 20A, 29A, 250uA, 0.04 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 20A. ID (T=25°C): 29A. Idss (max): 250uA. On-resistance Rds On: 0.04 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 700pF. Cost): 240pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 57 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 100A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 68W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 31 ns. Td(on): 7 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 20/04/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 153
IRFZ44N

IRFZ44N

N-channel transistor, 35A, 49A, 250uA, 0.0175 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 35A. ID (T...
IRFZ44N
N-channel transistor, 35A, 49A, 250uA, 0.0175 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 35A. ID (T=25°C): 49A. Idss (max): 250uA. On-resistance Rds On: 0.0175 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 63us. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 94W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
IRFZ44N
N-channel transistor, 35A, 49A, 250uA, 0.0175 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 35A. ID (T=25°C): 49A. Idss (max): 250uA. On-resistance Rds On: 0.0175 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 63us. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 94W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
1.26$ VAT incl.
(1.26$ excl. VAT)
1.26$

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