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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 3.4A, 5.4A, 500uA, 2 Ohms, TO-247, TO-247AC, 800V - IRFPE40

N-channel transistor, 3.4A, 5.4A, 500uA, 2 Ohms, TO-247, TO-247AC, 800V - IRFPE40
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Quantity excl. VAT VAT incl.
1 - 4 4.03$ 4.03$
5 - 9 3.83$ 3.83$
10 - 24 3.63$ 3.63$
25 - 33 3.43$ 3.43$
Quantity U.P
1 - 4 4.03$ 4.03$
5 - 9 3.83$ 3.83$
10 - 24 3.63$ 3.63$
25 - 33 3.43$ 3.43$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 33
Set of 1

N-channel transistor, 3.4A, 5.4A, 500uA, 2 Ohms, TO-247, TO-247AC, 800V - IRFPE40. N-channel transistor, 3.4A, 5.4A, 500uA, 2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 3.4A. ID (T=25°C): 5.4A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 800V. C(in): 1900pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Id(imp): 22A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Function: fast switching, ORION TV. G-S Protection: no. Quantity in stock updated on 20/04/2025, 19:25.

Technical documentation

Equivalent products :

Quantity in stock : 52
IRFPG50

IRFPG50

N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V. ID (T=100°C): 3.9A. ID (T...
IRFPG50
N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 1000V. C(in): 2800pF. Cost): 250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 24A. IDss (min): 100uA. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v. Drain-source protection : yes. G-S Protection: no
IRFPG50
N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 1000V. C(in): 2800pF. Cost): 250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 24A. IDss (min): 100uA. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v. Drain-source protection : yes. G-S Protection: no
Set of 1
5.82$ VAT incl.
(5.82$ excl. VAT)
5.82$
Quantity in stock : 127
IRFPE50

IRFPE50

N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 4.7A. ID (...
IRFPE50
N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 7.8A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 800V. C(in): 3100pF. Cost): 800pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 31A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFPE50
N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 7.8A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 800V. C(in): 3100pF. Cost): 800pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 31A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
5.22$ VAT incl.
(5.22$ excl. VAT)
5.22$

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