IRFPE50

Quantity	excl. VAT	VAT incl.
1 - 4	5.22$	5.22$
5 - 9	4.96$	4.96$
10 - 24	4.70$	4.70$
25 - 49	4.44$	4.44$
50 - 99	4.33$	4.33$
100 - 133	3.76$	3.76$

Quantity	U.P
1 - 4	5.22$	5.22$
5 - 9	4.96$	4.96$
10 - 24	4.70$	4.70$
25 - 49	4.44$	4.44$
50 - 99	4.33$	4.33$
100 - 133	3.76$	3.76$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 133

Set of 1

IRFPE50. C(in): 3100pF. Cost): 800pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 31A. ID (T=100°C): 4.7A. ID (T=25°C): 7.8A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 1.2 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 06/01/2025, 10:25.

Technical documentation

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!