N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V - IRFPE50

Quantity	excl. VAT	VAT incl.
1 - 4	5.22$	5.22$
5 - 9	4.96$	4.96$
10 - 24	4.70$	4.70$
25 - 49	4.44$	4.44$
50 - 99	4.33$	4.33$
100 - 127	3.76$	3.76$

Quantity	U.P
1 - 4	5.22$	5.22$
5 - 9	4.96$	4.96$
10 - 24	4.70$	4.70$
25 - 49	4.44$	4.44$
50 - 99	4.33$	4.33$
100 - 127	3.76$	3.76$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 127

Set of 1

N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V - IRFPE50. N-channel transistor, 4.7A, 7.8A, 500uA, 1.2 Ohms, TO-247, TO-247AC, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 7.8A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 800V. C(in): 3100pF. Cost): 800pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 31A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 16/04/2025, 04:25.

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