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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 22A, 31A, 250uA, 0.077 Ohms, TO-247, TO-247AC, 100V - IRFP140

N-channel transistor, 22A, 31A, 250uA, 0.077 Ohms, TO-247, TO-247AC, 100V - IRFP140
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 2.72$ 2.72$
5 - 9 2.58$ 2.58$
10 - 24 2.45$ 2.45$
25 - 49 2.31$ 2.31$
50 - 74 2.26$ 2.26$
Quantity U.P
1 - 4 2.72$ 2.72$
5 - 9 2.58$ 2.58$
10 - 24 2.45$ 2.45$
25 - 49 2.31$ 2.31$
50 - 74 2.26$ 2.26$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 74
Set of 1

N-channel transistor, 22A, 31A, 250uA, 0.077 Ohms, TO-247, TO-247AC, 100V - IRFP140. N-channel transistor, 22A, 31A, 250uA, 0.077 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 22A. ID (T=25°C): 31A. Idss (max): 250uA. On-resistance Rds On: 0.077 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 1700pF. Cost): 550pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60.4k Ohms. IDss (min): 25uA. Note: complementary transistor (pair) IRFP9140. Pd (Power Dissipation, Max): 180W. RoHS: yes. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Power: 180W. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 23:25.

Technical documentation

Equivalent products :

Quantity in stock : 39
IRFP150N

IRFP150N

N-channel transistor, 30A, 42A, 250uA, 0.36 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 30A. ID (T=...
IRFP150N
N-channel transistor, 30A, 42A, 250uA, 0.36 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 0.36 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 1900pF. Cost): 450pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 140A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
IRFP150N
N-channel transistor, 30A, 42A, 250uA, 0.36 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 0.36 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 1900pF. Cost): 450pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 140A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
2.71$ VAT incl.
(2.71$ excl. VAT)
2.71$
Quantity in stock : 49
IRFP150

IRFP150

N-channel transistor, 29A, 41A, 250uA, 0.55 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 29A. ID (T=...
IRFP150
N-channel transistor, 29A, 41A, 250uA, 0.55 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 29A. ID (T=25°C): 41A. Idss (max): 250uA. On-resistance Rds On: 0.55 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 2800pF. Cost): 1100pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Id(imp): 160A. IDss (min): 25uA. Marking on the case: IRFP150. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HEXFET. Operating temperature: -55...+175°C. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFP150
N-channel transistor, 29A, 41A, 250uA, 0.55 Ohms, TO-247, TO-247AC, 100V. ID (T=100°C): 29A. ID (T=25°C): 41A. Idss (max): 250uA. On-resistance Rds On: 0.55 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. C(in): 2800pF. Cost): 1100pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Id(imp): 160A. IDss (min): 25uA. Marking on the case: IRFP150. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HEXFET. Operating temperature: -55...+175°C. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
2.86$ VAT incl.
(2.86$ excl. VAT)
2.86$

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