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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 11A, 18A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V - IRF640

N-channel transistor, 11A, 18A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V - IRF640
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.58$ 1.58$
5 - 9 1.50$ 1.50$
10 - 24 1.42$ 1.42$
25 - 49 1.34$ 1.34$
50 - 60 1.31$ 1.31$
Quantity U.P
1 - 4 1.58$ 1.58$
5 - 9 1.50$ 1.50$
10 - 24 1.42$ 1.42$
25 - 49 1.34$ 1.34$
50 - 60 1.31$ 1.31$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 60
Set of 1

N-channel transistor, 11A, 18A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V - IRF640. N-channel transistor, 11A, 18A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1300pF. Cost): 430pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 72A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no. Quantity in stock updated on 20/04/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 200
IRF640N

IRF640N

N-channel transistor, 13A, 18A, 250uA, 0.15 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 13A. ID (T=...
IRF640N
N-channel transistor, 13A, 18A, 250uA, 0.15 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 0.15 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1160pF. Cost): 185pF. Channel type: N. Trr Diode (Min.): 167 ns. Type of transistor: MOSFET. Id(imp): 72A. IDss (min): 25uA. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IRF640N
N-channel transistor, 13A, 18A, 250uA, 0.15 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 0.15 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1160pF. Cost): 185pF. Channel type: N. Trr Diode (Min.): 167 ns. Type of transistor: MOSFET. Id(imp): 72A. IDss (min): 25uA. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
1.42$ VAT incl.
(1.42$ excl. VAT)
1.42$

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