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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 3.3A, 5.2A, 250uA, 0.8 Ohms, TO-220, TO-220AB, 200V - IRF620

N-channel transistor, 3.3A, 5.2A, 250uA, 0.8 Ohms, TO-220, TO-220AB, 200V - IRF620
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.06$ 1.06$
5 - 9 1.01$ 1.01$
10 - 24 0.96$ 0.96$
25 - 47 0.90$ 0.90$
Quantity U.P
1 - 4 1.06$ 1.06$
5 - 9 1.01$ 1.01$
10 - 24 0.96$ 0.96$
25 - 47 0.90$ 0.90$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 47
Set of 1

N-channel transistor, 3.3A, 5.2A, 250uA, 0.8 Ohms, TO-220, TO-220AB, 200V - IRF620. N-channel transistor, 3.3A, 5.2A, 250uA, 0.8 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss (max): 250uA. On-resistance Rds On: 0.8 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 260pF. Cost): 100pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 18A. IDss (min): 25uA. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 7.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 20/04/2025, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 513
IRF630

IRF630

N-channel transistor, PCB soldering, TO-220AB, 50, 200V, 9A, 0.35 Ohms, TO-220, TO-220, 200V. Housin...
IRF630
N-channel transistor, PCB soldering, TO-220AB, 50, 200V, 9A, 0.35 Ohms, TO-220, TO-220, 200V. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): 50. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 9A. On-resistance Rds On: 0.35 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF630. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.35 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 540pF. Maximum dissipation Ptot [W]: 75W. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 10 ns. Technology: MESH OVERLAY MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
IRF630
N-channel transistor, PCB soldering, TO-220AB, 50, 200V, 9A, 0.35 Ohms, TO-220, TO-220, 200V. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): 50. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 9A. On-resistance Rds On: 0.35 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF630. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.35 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 540pF. Maximum dissipation Ptot [W]: 75W. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 10 ns. Technology: MESH OVERLAY MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
1.12$ VAT incl.
(1.12$ excl. VAT)
1.12$

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