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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 1.5A, 2.4A, 2.4A, 3 Ohms, 500V - BUZ74

N-channel transistor, 1.5A, 2.4A, 2.4A, 3 Ohms, 500V - BUZ74
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.66$ 1.66$
Quantity U.P
1 - 4 1.66$ 1.66$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 4
Set of 1

N-channel transistor, 1.5A, 2.4A, 2.4A, 3 Ohms, 500V - BUZ74. N-channel transistor, 1.5A, 2.4A, 2.4A, 3 Ohms, 500V. ID (T=100°C): 1.5A. ID (T=25°C): 2.4A. Idss (max): 2.4A. On-resistance Rds On: 3 Ohms. Voltage Vds(max): 500V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 40W. Technology: V-MOS. Quantity per case: 1. Quantity in stock updated on 19/04/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 112
IRF820

IRF820

N-channel transistor, 1.6A, 2.5A, 250uA, 3 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 1.6A. ID (T=...
IRF820
N-channel transistor, 1.6A, 2.5A, 250uA, 3 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 1.6A. ID (T=25°C): 2.5A. Idss (max): 250uA. On-resistance Rds On: 3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. Cost): 92pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. IDss (min): 25uA. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 33 ns. Td(on): 8 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. C(in): 360pF. G-S Protection: no
IRF820
N-channel transistor, 1.6A, 2.5A, 250uA, 3 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 1.6A. ID (T=25°C): 2.5A. Idss (max): 250uA. On-resistance Rds On: 3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. Cost): 92pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. IDss (min): 25uA. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 33 ns. Td(on): 8 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. C(in): 360pF. G-S Protection: no
Set of 1
1.32$ VAT incl.
(1.32$ excl. VAT)
1.32$

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