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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 5A, 100uA, 1.2 Ohms, TO-220FP, TO220F-3L, 500V - 2SK3199

N-channel transistor, 5A, 100uA, 1.2 Ohms, TO-220FP, TO220F-3L, 500V - 2SK3199
Quantity excl. VAT VAT incl.
1 - 1 6.76$ 6.76$
2 - 2 6.43$ 6.43$
3 - 4 6.22$ 6.22$
5 - 9 6.09$ 6.09$
10 - 19 5.95$ 5.95$
20 - 29 5.75$ 5.75$
30+ 5.55$ 5.55$
Quantity U.P
1 - 1 6.76$ 6.76$
2 - 2 6.43$ 6.43$
3 - 4 6.22$ 6.22$
5 - 9 6.09$ 6.09$
10 - 19 5.95$ 5.95$
20 - 29 5.75$ 5.75$
30+ 5.55$ 5.55$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 5A, 100uA, 1.2 Ohms, TO-220FP, TO220F-3L, 500V - 2SK3199. N-channel transistor, 5A, 100uA, 1.2 Ohms, TO-220FP, TO220F-3L, 500V. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO220F-3L. Voltage Vds(max): 500V. C(in): 650pF. Cost): 250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 2us. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 20A. IDss (min): 0.1uA. Equivalents: FS5KM-10-AW. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 18 ns. Technology: V-MOS (F). Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Sanken. Quantity in stock updated on 22/08/2025, 14:15.

Technical documentation

Equivalent products :

Quantity in stock : 291
FQPF5N60C

FQPF5N60C

N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.6A. ID (T=...
FQPF5N60C
N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. On-resistance Rds On: 2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 515pF. Cost): 55pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. G-S Protection: no. Id(imp): 18A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 10 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQPF5N60C
N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. On-resistance Rds On: 2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 515pF. Cost): 55pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. G-S Protection: no. Id(imp): 18A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 10 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.44$ VAT incl.
(1.44$ excl. VAT)
1.44$

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