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Semiconductors Transistors

FQP5N60C

FQP5N60C
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.66$ 2.66$
5 - 9 2.53$ 2.53$
10 - 24 2.40$ 2.40$
25 - 46 2.26$ 2.26$
Quantity U.P
1 - 4 2.66$ 2.66$
5 - 9 2.53$ 2.53$
10 - 24 2.40$ 2.40$
25 - 46 2.26$ 2.26$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 46
Set of 1

FQP5N60C. C(in): 515pF. Cost): 55pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 18A. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: 'enhancement mode power field effect transistor'. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 17:25.

Technical documentation

Equivalent products :

Quantity in stock : 10
IRFBC40

IRFBC40

C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Dra...
IRFBC40
C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 25A. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
IRFBC40
C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 25A. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
2.01$ VAT incl.
(2.01$ excl. VAT)
2.01$

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Quantity in stock : 471
BT151-500R

BT151-500R

RoHS: yes. Component family: thyristor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC st...
BT151-500R
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BYW80-200

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AT89S51-24PU

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RoHS: yes. Component family: microcontroller. Housing: PCB soldering. Housing: DIP40. Housing (JEDEC...
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IRFBC30

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C(in): 660pF. Cost): 86pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quant...
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BT151-800R

BT151-800R

RoHS: yes. Conditioning: plastic tube. Conditioning unit: 50. Igt (max): 15mA. Igt (Type): 2mA. Ih (...
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TDA4605-3

TDA4605-3

Number of terminals: 8. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. H...
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BTA26-600B

BTA26-600B

RoHS: yes. Conditioning: plastic tube. Conditioning unit: 30. Function: 2500V insulation. Igt (max):...
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BUZ90

BUZ90

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 2.8A. ID ...
BUZ90
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Quantity in stock : 131
2SC5387

2SC5387

Quantity per case: 1. Semiconductor material: silicon. Function: VCE(sat) 3V max. Collector current:...
2SC5387
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