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Semiconductors Transistors

STP7NK80ZFP

STP7NK80ZFP
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.21$ 2.21$
5 - 9 2.88$ 2.88$
10 - 24 2.82$ 2.82$
25 - 45 2.71$ 2.71$
Quantity U.P
1 - 4 2.21$ 2.21$
5 - 9 2.88$ 2.88$
10 - 24 2.82$ 2.82$
25 - 45 2.71$ 2.71$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 45
Set of 1

STP7NK80ZFP. Channel type: N. Housing: TO-220FP. Type of transistor: MOSFET. Function: 'EXTREMELY HIGH dv/dt CAPABILITY'. Id(imp): 20.8A. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss: 1uA. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P7NK80ZFP. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 20 ns. Technology: SuperMESH. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Vgs(th) min.: 3.75V. Type of transistor: MOSFET power transistor. Max drain current: 5.2A. On-resistance Rds On: 1.8 Ohms. Number of terminals: 3. Spec info: Zener-Protected SuperMESH™Power MOSFET. Drain-source voltage (Vds): 800V. G-S Protection: yes. Quantity in stock updated on 25/12/2024, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 716
FQPF8N80C

FQPF8N80C

C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1....
FQPF8N80C
C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 690 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 35nC, Low Crss 13pF. Production date: 201432. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 59W. On-resistance Rds On: 1.29 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. G-S Protection: no
FQPF8N80C
C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 690 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 35nC, Low Crss 13pF. Production date: 201432. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 59W. On-resistance Rds On: 1.29 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. G-S Protection: no
Set of 1
2.39$ VAT incl.
(2.39$ excl. VAT)
2.39$
Quantity in stock : 22
STP8NK80ZFP

STP8NK80ZFP

C(in): 1320pF. Cost): 143pF. Channel type: N. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. ...
STP8NK80ZFP
C(in): 1320pF. Cost): 143pF. Channel type: N. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Id(imp): 24.8A. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P8NK80ZFP. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 17 ns. Technology: SuperMESH™Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Zener-Protected, Power MOSFET transistor. Drain-source protection : yes. G-S Protection: yes
STP8NK80ZFP
C(in): 1320pF. Cost): 143pF. Channel type: N. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Id(imp): 24.8A. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P8NK80ZFP. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 17 ns. Technology: SuperMESH™Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Zener-Protected, Power MOSFET transistor. Drain-source protection : yes. G-S Protection: yes
Set of 1
2.41$ VAT incl.
(2.41$ excl. VAT)
2.41$

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