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Electronic components and equipment, for businesses and individuals

STP4NB80FP

STP4NB80FP
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 2.07$ 2.07$
5 - 9 1.97$ 1.97$
10 - 24 1.87$ 1.87$
25 - 49 1.76$ 1.76$
50 - 81 1.72$ 1.72$
Quantity U.P
1 - 4 2.07$ 2.07$
5 - 9 1.97$ 1.97$
10 - 24 1.87$ 1.87$
25 - 49 1.76$ 1.76$
50 - 81 1.72$ 1.72$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 81
Set of 1

STP4NB80FP. C(in): 700pF. Cost): 95pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Id(imp): 16A. ID (T=100°C): 2.4A. ID (T=25°C): 4A. Idss (max): 50uA. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 3 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 14 ns. Technology: PowerMESH MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. G-S Protection: no. Quantity in stock updated on 25/12/2024, 13:25.

Equivalent products :

Quantity in stock : 31
2SK2645

2SK2645

C(in): 900pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. F...
2SK2645
C(in): 900pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 32A. ID (T=25°C): 9A. Idss (max): 100nA. IDss (min): 10nA. Marking on the case: K2645. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Operating temperature: -...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
2SK2645
C(in): 900pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 32A. ID (T=25°C): 9A. Idss (max): 100nA. IDss (min): 10nA. Marking on the case: K2645. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Operating temperature: -...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
3.96$ VAT incl.
(3.96$ excl. VAT)
3.96$

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