N-channel FETs and MOSFETs

N-channel transistor, PCB soldering (SMD), SOT-23, 60V, 0.15A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.15A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: ZVN3306F. Drain current through resistor Rds [Ohm] @ Ids [A]: 5 Ohms @ 0.5A. Gate breakdown voltage Ugs [V]: 2.4V. Switch-on time ton [nsec.]: 5 ns. Switch-off delay tf[nsec.]: 6 ns. Ciss Gate Capacitance [pF]: 35pF. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 0.18A, 0.18A, 10 Ohms, TO-92, TO-92, 200V. ID (T=25°C): 0.18A. Idss (max): 0.18A. On-resistance Rds On: 10 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Pd (Power Dissipation, Max): 0.7W. Assembly/installation: PCB through-hole mounting. Technology: ENHANCEMENT MODE VERTICAL DMOS FET

N-channel transistor, 3A, 3.8A, 1uA, 0.13 Ohms, SOT-223 ( TO-226 ), SOT-223, 70V. ID (T=100°C): 3A. ID (T=25°C): 3.8A. Idss (max): 1uA. On-resistance Rds On: 0.13 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 70V. C(in): 298pF. Cost): 35pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 10A. IDss (min): 0uA. Number of terminals: 3. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11.5 ns. Td(on): 1.9 ns. Technology: 'Enhancement Mode MOSFET'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V