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Semiconductors Transistors
N-channel FETs and MOSFETs

N-channel FETs and MOSFETs

1207 products available
Products per page :
1...474849
Quantity in stock : 465
YJP130G10B

YJP130G10B

N-channel transistor, 0.0055 Ohms, TO-220AB, 100V. On-resistance Rds On: 0.0055 Ohms. Housing: TO-22...
YJP130G10B
N-channel transistor, 0.0055 Ohms, TO-220AB, 100V. On-resistance Rds On: 0.0055 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 100V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 130A. Power: 260W
YJP130G10B
N-channel transistor, 0.0055 Ohms, TO-220AB, 100V. On-resistance Rds On: 0.0055 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 100V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 130A. Power: 260W
Set of 1
1.81$ VAT incl.
(1.81$ excl. VAT)
1.81$
Quantity in stock : 466
YJP200G06A

YJP200G06A

N-channel transistor, 0.0029 Ohms, TO-220AB, 60V. On-resistance Rds On: 0.0029 Ohms. Housing: TO-220...
YJP200G06A
N-channel transistor, 0.0029 Ohms, TO-220AB, 60V. On-resistance Rds On: 0.0029 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 60V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 200A. Power: 260W
YJP200G06A
N-channel transistor, 0.0029 Ohms, TO-220AB, 60V. On-resistance Rds On: 0.0029 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 60V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 200A. Power: 260W
Set of 1
1.38$ VAT incl.
(1.38$ excl. VAT)
1.38$
Quantity in stock : 149
YJP70G10A

YJP70G10A

N-channel transistor, 0.0086 Ohms, TO-220, 100V. On-resistance Rds On: 0.0086 Ohms. Housing: TO-220....
YJP70G10A
N-channel transistor, 0.0086 Ohms, TO-220, 100V. On-resistance Rds On: 0.0086 Ohms. Housing: TO-220. Drain-source voltage (Vds): 100V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 70A. Power: 125W
YJP70G10A
N-channel transistor, 0.0086 Ohms, TO-220, 100V. On-resistance Rds On: 0.0086 Ohms. Housing: TO-220. Drain-source voltage (Vds): 100V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 70A. Power: 125W
Set of 1
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
Quantity in stock : 596
YTAF630

YTAF630

N-channel transistor, 10A, 10A, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=25°C): 10A. Idss (max): 10...
YTAF630
N-channel transistor, 10A, 10A, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=25°C): 10A. Idss (max): 10A. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Assembly/installation: PCB through-hole mounting. Technology: Advanced Power MOSFET. Number of terminals: 3. Quantity per case: 1
YTAF630
N-channel transistor, 10A, 10A, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=25°C): 10A. Idss (max): 10A. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Assembly/installation: PCB through-hole mounting. Technology: Advanced Power MOSFET. Number of terminals: 3. Quantity per case: 1
Set of 1
1.44$ VAT incl.
(1.44$ excl. VAT)
1.44$
Quantity in stock : 1474
ZVN3306F

ZVN3306F

N-channel transistor, PCB soldering (SMD), SOT-23, 60V, 0.15A. Housing: PCB soldering (SMD). Housing...
ZVN3306F
N-channel transistor, PCB soldering (SMD), SOT-23, 60V, 0.15A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.15A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: ZVN3306F. Drain current through resistor Rds [Ohm] @ Ids [A]: 5 Ohms @ 0.5A. Gate breakdown voltage Ugs [V]: 2.4V. Switch-on time ton [nsec.]: 5 ns. Switch-off delay tf[nsec.]: 6 ns. Ciss Gate Capacitance [pF]: 35pF. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
ZVN3306F
N-channel transistor, PCB soldering (SMD), SOT-23, 60V, 0.15A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.15A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: ZVN3306F. Drain current through resistor Rds [Ohm] @ Ids [A]: 5 Ohms @ 0.5A. Gate breakdown voltage Ugs [V]: 2.4V. Switch-on time ton [nsec.]: 5 ns. Switch-off delay tf[nsec.]: 6 ns. Ciss Gate Capacitance [pF]: 35pF. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.53$ VAT incl.
(0.53$ excl. VAT)
0.53$
Quantity in stock : 66
ZVNL120A

ZVNL120A

N-channel transistor, 0.18A, 0.18A, 10 Ohms, TO-92, TO-92, 200V. ID (T=25°C): 0.18A. Idss (max): 0....
ZVNL120A
N-channel transistor, 0.18A, 0.18A, 10 Ohms, TO-92, TO-92, 200V. ID (T=25°C): 0.18A. Idss (max): 0.18A. On-resistance Rds On: 10 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. Channel type: N. Type of transistor: MOSFET. Function: Logic-Level. Pd (Power Dissipation, Max): 0.7W. Assembly/installation: PCB through-hole mounting. Technology: ENHANCEMENT MODE VERTICAL DMOS FET. Quantity per case: 1
ZVNL120A
N-channel transistor, 0.18A, 0.18A, 10 Ohms, TO-92, TO-92, 200V. ID (T=25°C): 0.18A. Idss (max): 0.18A. On-resistance Rds On: 10 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. Channel type: N. Type of transistor: MOSFET. Function: Logic-Level. Pd (Power Dissipation, Max): 0.7W. Assembly/installation: PCB through-hole mounting. Technology: ENHANCEMENT MODE VERTICAL DMOS FET. Quantity per case: 1
Set of 1
1.33$ VAT incl.
(1.33$ excl. VAT)
1.33$
Quantity in stock : 159
ZXMN7A11GTA

ZXMN7A11GTA

N-channel transistor, 3A, 3.8A, 1uA, 0.13 Ohms, SOT-223 ( TO-226 ), SOT-223, 70V. ID (T=100°C): 3A....
ZXMN7A11GTA
N-channel transistor, 3A, 3.8A, 1uA, 0.13 Ohms, SOT-223 ( TO-226 ), SOT-223, 70V. ID (T=100°C): 3A. ID (T=25°C): 3.8A. Idss (max): 1uA. On-resistance Rds On: 0.13 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 70V. C(in): 298pF. Cost): 35pF. Channel type: N. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 10A. IDss (min): 0uA. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11.5 ns. Td(on): 1.9 ns. Technology: 'Enhancement Mode MOSFET'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
ZXMN7A11GTA
N-channel transistor, 3A, 3.8A, 1uA, 0.13 Ohms, SOT-223 ( TO-226 ), SOT-223, 70V. ID (T=100°C): 3A. ID (T=25°C): 3.8A. Idss (max): 1uA. On-resistance Rds On: 0.13 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 70V. C(in): 298pF. Cost): 35pF. Channel type: N. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 10A. IDss (min): 0uA. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11.5 ns. Td(on): 1.9 ns. Technology: 'Enhancement Mode MOSFET'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
1.08$ VAT incl.
(1.08$ excl. VAT)
1.08$
1...474849

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