N-channel transistor, 3A, 3.8A, 1uA, 0.13 Ohms, SOT-223 ( TO-226 ), SOT-223, 70V - ZXMN7A11GTA

Quantity	excl. VAT	VAT incl.
1 - 4	1.08$	1.08$
5 - 9	1.02$	1.02$
10 - 24	0.97$	0.97$
25 - 49	0.92$	0.92$
50 - 99	0.89$	0.89$
100 - 159	0.79$	0.79$

Quantity	U.P
1 - 4	1.08$	1.08$
5 - 9	1.02$	1.02$
10 - 24	0.97$	0.97$
25 - 49	0.92$	0.92$
50 - 99	0.89$	0.89$
100 - 159	0.79$	0.79$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 159

Set of 1

N-channel transistor, 3A, 3.8A, 1uA, 0.13 Ohms, SOT-223 ( TO-226 ), SOT-223, 70V - ZXMN7A11GTA. N-channel transistor, 3A, 3.8A, 1uA, 0.13 Ohms, SOT-223 ( TO-226 ), SOT-223, 70V. ID (T=100°C): 3A. ID (T=25°C): 3.8A. Idss (max): 1uA. On-resistance Rds On: 0.13 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 70V. C(in): 298pF. Cost): 35pF. Channel type: N. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 10A. IDss (min): 0uA. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11.5 ns. Td(on): 1.9 ns. Technology: 'Enhancement Mode MOSFET'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 14/04/2025, 23:25.

Technical documentation