Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 6.22$ | 6.22$ |
2 - 2 | 5.91$ | 5.91$ |
3 - 4 | 5.72$ | 5.72$ |
5 - 9 | 5.59$ | 5.59$ |
10 - 19 | 5.47$ | 5.47$ |
20 - 29 | 5.28$ | 5.28$ |
30+ | 5.10$ | 5.10$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 6.22$ | 6.22$ |
2 - 2 | 5.91$ | 5.91$ |
3 - 4 | 5.72$ | 5.72$ |
5 - 9 | 5.59$ | 5.59$ |
10 - 19 | 5.47$ | 5.47$ |
20 - 29 | 5.28$ | 5.28$ |
30+ | 5.10$ | 5.10$ |
N-channel transistor, TO-220FP, TO-220F-3FS, 430V - TIG056BF-1E. N-channel transistor, TO-220FP, TO-220F-3FS, 430V. Housing: TO-220FP. Housing (according to data sheet): TO-220F-3FS. Collector/emitter voltage Vceo: 430V. C(in): 5500pF. Cost): 100pF. CE diode: no. Channel type: N. Various: flash, stroboscope control. Function: Low-saturation voltage, Ultra high speed switching. Germanium diode: Suppressor. Collector current: 240A. Ic(pulse): 240A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: High speed hall time--tf=270nS(typ). Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 46 ns. Technology: Enhancement type. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 3.6V. Maximum saturation voltage VCE(sat): 5V. Gate/emitter voltage VGE: 33V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 04/06/2025, 02:25.
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