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N-channel transistor, TO-220FP, TO-220F-3FS, 430V - TIG056BF-1E

N-channel transistor, TO-220FP, TO-220F-3FS, 430V - TIG056BF-1E
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Quantity excl. VAT VAT incl.
1 - 1 6.22$ 6.22$
2 - 2 5.91$ 5.91$
3 - 4 5.72$ 5.72$
5 - 9 5.59$ 5.59$
10 - 19 5.47$ 5.47$
20 - 29 5.28$ 5.28$
30+ 5.10$ 5.10$
Quantity U.P
1 - 1 6.22$ 6.22$
2 - 2 5.91$ 5.91$
3 - 4 5.72$ 5.72$
5 - 9 5.59$ 5.59$
10 - 19 5.47$ 5.47$
20 - 29 5.28$ 5.28$
30+ 5.10$ 5.10$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, TO-220FP, TO-220F-3FS, 430V - TIG056BF-1E. N-channel transistor, TO-220FP, TO-220F-3FS, 430V. Housing: TO-220FP. Housing (according to data sheet): TO-220F-3FS. Collector/emitter voltage Vceo: 430V. C(in): 5500pF. Cost): 100pF. CE diode: no. Channel type: N. Various: flash, stroboscope control. Function: Low-saturation voltage, Ultra high speed switching. Germanium diode: Suppressor. Collector current: 240A. Ic(pulse): 240A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: High speed hall time--tf=270nS(typ). Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 46 ns. Technology: Enhancement type. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 3.6V. Maximum saturation voltage VCE(sat): 5V. Gate/emitter voltage VGE: 33V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 04/06/2025, 02:25.

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