N-channel FETs and MOSFETs

N-channel transistor, 6A, 9A, 50uA, 0.78 Ohms, TO-220, TO-220AB, 800V. ID (T=100°C): 6A. ID (T=25°C): 9A. Idss (max): 50uA. On-resistance Rds On: 0.78 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 800V. C(in): 2180pF. Cost): 205pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 645 ns. Type of transistor: MOSFET. Function: Zener diode protection. G-S Protection: yes. Id(imp): 36A. IDss (min): 1uA. Marking on the case: P10NK80Z. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 30 ns. Technology: SuperMESH ™Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 6A, 9A, 50uA, 0.78 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 6A. ID (T=25°C): 9A. Idss (max): 50uA. On-resistance Rds On: 0.78 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. C(in): 2180pF. Cost): 205pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 645 ns. Type of transistor: MOSFET. Function: protected with zener diode. G-S Protection: yes. Id(imp): 36A. IDss (min): 1uA. Marking on the case: P10NK80ZFP. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 30 ns. Technology: SuperMESH ™Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-220FP, 800V, 9A. Housing: PCB soldering. Housing: TO-220FP. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P10NK80ZFP. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.9 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 65 ns. Ciss Gate Capacitance [pF]: 2180pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3.8A, 6A, 50uA, 0.48 Ohms, TO-220FP, TO-220FP, 400V. ID (T=100°C): 3.8A. ID (T=25°C): 6A. Idss (max): 50uA. On-resistance Rds On: 0.48 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 400V. C(in): 1250pF. Cost): 210pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. G-S Protection: no. Id(imp): 42.8A. IDss (min): 1uA. Note: Viso 2000VDC. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 17 ns. Technology: PowerMESH MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-220AB, 400V, 9A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P11NK40Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.55 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 930pF. Maximum dissipation Ptot [W]: 110W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 7A, 11A, 10uA, 0.4 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1000pF. Cost): 230pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Id(imp): 44A. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 20 ns. Technology: MDmesh Power MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.37 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Id(imp): 40A. IDss (min): 1uA. Marking on the case: 11NM60ND. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Operating temperature: -...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 4.7A, 11A, 100uA, 0.35 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.35 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1630pF. Cost): 750pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 612 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Id(imp): 44A. IDss (min): 10uA. Marking on the case: P11NM80. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 22 ns. Technology: MDmesh MOSFET. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 77A, 110A, 10uA, 0.009 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 77A. ID (T=25°C): 110A. Idss (max): 10uA. On-resistance Rds On: 0.009 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 5200pF. Cost): 785pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 152 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 440A. IDss (min): 1uA. Marking on the case: P120NF10. Number of terminals: 3. Pd (Power Dissipation, Max): 312W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 132 ns. Td(on): 25 ns. Technology: STripFET™ II Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 7.5A, 12A, 10uA, 0.3 Ohms, TO-220, TO-220, 550V. ID (T=100°C): 7.5A. ID (T=25°C): 12A. Idss (max): 10uA. On-resistance Rds On: 0.3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 550V. C(in): 1000pF. Cost): 250pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 48A. IDss (min): 1uA. Marking on the case: P12NM50. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(on): 20 ns. Technology: MDmesh Power MOSFET. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 7.5A, 12A, 10uA, 0.3 Ohms, TO-220FP, TO-220FP, 550V. ID (T=100°C): 7.5A. ID (T=25°C): 12A. Idss (max): 10uA. On-resistance Rds On: 0.3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 550V. C(in): 1000pF. Cost): 250pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 48A. IDss (min): 1uA. Marking on the case: P12NM50FP. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(on): 20 ns. Technology: MDmesh Power MOSFET. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 6.93A, 11A, 100uA, 0.28 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 6.93A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 790pF. Cost): 60pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: Low input capacitance and gate charge. G-S Protection: no. Id(imp): 44A. IDss (min): 1uA. Marking on the case: 13NM60N. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Spec info: ID pulse 44A. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 9A, 14A, 10uA, 0.16 Ohms, TO-220, TO-220, 120V. ID (T=100°C): 9A. ID (T=25°C): 14A. Idss (max): 10uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 120V. C(in): 460pF. Cost): 70pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: Low Input Charge. G-S Protection: no. Id(imp): 56A. IDss (min): 1uA. Marking on the case: P14NF12. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 16 ns. Technology: STripFET II POWER MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 7.6A, 14A, 50uA, 0.34 Ohms, TO-220FP, TO-220FP, 500V. ID (T=100°C): 7.6A. ID (T=25°C): 14A. Idss (max): 50uA. On-resistance Rds On: 0.34 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 500V. C(in): 2000pF. Cost): 238pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Function: Zener diode protection. G-S Protection: yes. Id(imp): 48A. IDss (min): 1uA. Marking on the case: P14NK50ZFP. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 24 ns. Technology: SuperMESH ™Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 11A, 16A, 10uA, 0.08 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 11A. ID (T=25°C): 16A. Idss (max): 10uA. On-resistance Rds On: 0.08 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 315pF. Cost): 70pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: Exceptional dv/dt capability, Low gate charge. G-S Protection: no. Id(imp): 64A. IDss (min): 1uA. Marking on the case: P16NF06. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. RoHS: yes. Spec info: ID pulse 64A, Low gate charge. Assembly/installation: PCB through-hole mounting. Td(off): 7 ns. Td(on): 17 ns. Technology: STripFET™ II Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 11A, 16A, 10uA, 0.08 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 11A. ID (T=25°C): 16A. Idss (max): 10uA. On-resistance Rds On: 0.08 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 345pF. Cost): 72pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 64A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. RoHS: yes. Spec info: Low Gate Charge. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 10 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V

N-channel transistor, 60.4k Ohms, 60.4k Ohms, 100uA, 3m Ohms, TO-220, TO-220, 40V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 60.4k Ohms. Idss (max): 100uA. On-resistance Rds On: 3m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 40V. C(in): 5100pF. Cost): 1270pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: switching, automotive applications. G-S Protection: no. Id(imp): 480A. IDss (min): 10uA. Marking on the case: 200N4F3. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 19 ns. Technology: STripFET™ Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 14A, 20A, 20A, 0.06 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 14A. ID (T=25°C): 20A. Idss (max): 20A. On-resistance Rds On: 0.06 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: HIGHdv/dtCAP. Note: Low Gate Charge. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: II Power Mos

ROHS: Yes. Housing: TO220-3. Assembly/installation: THT. Packaging: tubus. Type of transistor: N-MOSFET. Polarity: unipolar. Technology: MDmesh™. Drain-source voltage: 550V. Drain current: 20A. On-state resistance: 250m Ohms. Gate-source voltage: ±30V. Power: 192W. Channel type: 'enhanced'

N-channel transistor, 12.6A, 20A, 10uA, 0.26 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 500pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: Low Gate Capacitance. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: P20NM60FD. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 192W. RoHS: yes. Spec info: ID pulse 80A, HIGH dv/dt. Assembly/installation: PCB through-hole mounting. Td(off): 8 ns. Td(on): 25 ns. Technology: FDmesh™ Power MOSFET (with fast diode). Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 12.6A, 20A, 10uA, 0.025 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.025 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1500pF. Cost): 350pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: P20NM60FP. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 25 ns. Technology: MDmesh™ MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 18A, 26A, 10uA, 0.055 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 18A. ID (T=25°C): 26A. Idss (max): 10uA. On-resistance Rds On: 0.055 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 870pF. Cost): 125pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100us. Diode threshold voltage: 1.5V. Type of transistor: MOSFET. Function: SWITCHING APPLICATION. G-S Protection: no. Id(imp): 104A. IDss (min): 1uA. Marking on the case: P24NF10. Number of terminals: 3. Pd (Power Dissipation, Max): 85W. RoHS: yes. Spec info: Low Input Charge. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 60 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 12.6A, 20A, 100uA, 0.135 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.135 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1800pF. Cost): 115pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: 26NM60N. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Spec info: Low input capacitance and gate charge. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 85 ns. Technology: MDmesh PpwerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 25A, 35A, 10uA, 0.038 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 25A. ID (T=25°C): 35A. Idss (max): 10uA. On-resistance Rds On: 0.038 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 1180pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 110us. Diode threshold voltage: 1.3V. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 140A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 115W. RoHS: yes. Spec info: Low Input Charge. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 15 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 21A, 30A, 10uA, 0.032 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 10uA. On-resistance Rds On: 0.032 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 690pF. Cost): 170pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: trr 65ns, efficient dv/dt. Id(imp): 60.4k Ohms. IDss (min): 1uA. Marking on the case: P36NF06. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 27 ns. Td(on): 10 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V