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N-channel transistor, 7A, 11A, 10uA, 0.4 Ohms, TO-220, TO-220, 600V - STP11NM60

N-channel transistor, 7A, 11A, 10uA, 0.4 Ohms, TO-220, TO-220, 600V - STP11NM60
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Quantity excl. VAT VAT incl.
1 - 4 4.58$ 4.58$
5 - 9 4.35$ 4.35$
10 - 24 4.21$ 4.21$
25 - 49 4.12$ 4.12$
50 - 99 4.03$ 4.03$
100+ 3.80$ 3.80$
Quantity U.P
1 - 4 4.58$ 4.58$
5 - 9 4.35$ 4.35$
10 - 24 4.21$ 4.21$
25 - 49 4.12$ 4.12$
50 - 99 4.03$ 4.03$
100+ 3.80$ 3.80$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 7A, 11A, 10uA, 0.4 Ohms, TO-220, TO-220, 600V - STP11NM60. N-channel transistor, 7A, 11A, 10uA, 0.4 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1000pF. Cost): 230pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Id(imp): 44A. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 20 ns. Technology: MDmesh Power MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 07/06/2025, 18:25.

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