N-channel transistor, 12.6A, 20A, 100uA, 0.135 Ohms, TO-220, TO-220, 600V - STP26NM60N

Quantity	excl. VAT	VAT incl.
1 - 4	4.23$	4.23$
5 - 9	4.02$	4.02$
10 - 24	3.81$	3.81$
25 - 49	3.60$	3.60$
50 - 50	3.51$	3.51$

Quantity	U.P
1 - 4	4.23$	4.23$
5 - 9	4.02$	4.02$
10 - 24	3.81$	3.81$
25 - 49	3.60$	3.60$
50 - 50	3.51$	3.51$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 50

Set of 1

N-channel transistor, 12.6A, 20A, 100uA, 0.135 Ohms, TO-220, TO-220, 600V - STP26NM60N. N-channel transistor, 12.6A, 20A, 100uA, 0.135 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.135 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1800pF. Cost): 115pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 80A. IDss (min): 1uA. Marking on the case: 26NM60N. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 85 ns. Technology: MDmesh PpwerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Spec info: Low input capacitance and gate charge. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 19/04/2025, 01:25.