N-channel FETs and MOSFETs

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 500V, 8A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRF840ASPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 26 ns. Ciss Gate Capacitance [pF]: 1018pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-220AB, 500V, 8A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF840PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 49 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 500V, 8A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRF840SPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 49 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 9.1A, 11A, 150uA, 0.142 Ohms, SO, SO-8, 30 v. ID (T=100°C): 9.1A. ID (T=25°C): 11A. Idss (max): 150uA. On-resistance Rds On: 0.142 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 760pF. Cost): 170pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 12 ns. Type of transistor: MOSFET. G-S Protection: yes. Id(imp): 88A. IDss (min): 1uA. Marking on the case: IRF8707G. Number of terminals: 3. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 7.3 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Operating temperature: -50...+150°C. Gate/source voltage Vgs: 4.5V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 24A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 24A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F8788. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0028 Ohms @ 24A. Gate breakdown voltage Ugs [V]: 2.35V. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 5720pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 3.5A/-2.3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 3.5A/-2.3A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F9952. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms/025 Ohms @ 2.2/-1A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12 ns/19 ns. Switch-off delay tf[nsec.]: 26/40 ns. Ciss Gate Capacitance [pF]: 190/190pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 3.5A/-2.3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 3.5A/-2.3A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F9952Q. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.15 Ohms/0.4 Ohms @ 1/-0.5A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12 ns/19 ns. Switch-off delay tf[nsec.]: 26/40 ns. Ciss Gate Capacitance [pF]: 190/190pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 7A, 11A, 250uA, 0.52 Ohms, TO-220, TO-220, 500V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. On-resistance Rds On: 0.52 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 500V. C(in): 1423pF. Cost): 208pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 510 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 52nC. G-S Protection: no. Id(imp): 44A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Spec info: N-Ch MOSFET, VBRDSS 500V. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 14 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 11A, 17A, 250uA, 0.26 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 2830pF. Cost): 3310pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 68A. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 22 ns. Technology: SMPS MOSFET, HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 12A, 20A, 250uA, 0.21 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 12A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.21 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 2870pF. Cost): 3480pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 80A. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 22 ns. Technology: SMPS MOSFET, HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 17A, 23A, 250uA, 0.09 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 17A. ID (T=25°C): 23A. Idss (max): 250uA. On-resistance Rds On: 0.09 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 1200pF. Cost): 260pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. G-S Protection: no. Id(imp): 92A. IDss (min): 25uA. Marking on the case: B23N15D. Number of terminals: 3. Pd (Power Dissipation, Max): 136W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V

N-channel transistor, 40A, 56A, 250uA, 0.04 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 40A. ID (T=25°C): 56A. Idss (max): 250uA. On-resistance Rds On: 0.04 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 4220pF. Cost): 580pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: SMPS, High frequency DC-DC converters. G-S Protection: no. Id(imp): 220A. IDss (min): 25uA. Marking on the case: FB260N. Number of terminals: 3. Pd (Power Dissipation, Max): 380W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 190A, 270A, 250uA, 0.0021 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 190A. ID (T=25°C): 270A. Idss (max): 250uA. On-resistance Rds On: 0.0021 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 8970pF. Cost): 1020pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 44 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 1080A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 375W. Assembly/installation: PCB through-hole mounting. Td(off): 118 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 150A, 210A, 250uA, 0.0028 Ohm, TO-220, TO-220AB, 75V. ID (T=100°C): 150A. ID (T=25°C): 210A. Idss (max): 250uA. On-resistance Rds On: 0.0028 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 9400pF. Cost): 820pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 42 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 850A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 370W. Assembly/installation: PCB through-hole mounting. Td(off): 69 ns. Td(on): 25 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 150A, 210A, 250uA, 2.4M Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 150A. ID (T=25°C): 210A. Idss (max): 250uA. On-resistance Rds On: 2.4M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 6540pF. Cost): 720pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 840A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 60.4k Ohms, 170A, 250uA, 3.3M Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 170A. Idss (max): 250uA. On-resistance Rds On: 3.3M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 6920pF. Cost): 600pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 670A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 60.4k Ohms, 170A, 250uA, 3.3M Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 170A. Idss (max): 250uA. On-resistance Rds On: 3.3M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 6920pF. Cost): 600pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 670A. IDss (min): 20uA. Marking on the case: FB3207. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 110A, 160A, 250uA, 3.3M Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 110A. ID (T=25°C): 160A. Idss (max): 250uA. On-resistance Rds On: 3.3M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 4520pF. Cost): 500pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 31 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 620A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 90A, 128A, 250uA, 0.0046 Ohm, TO-220, TO-220AB, 75V. ID (T=100°C): 90A. ID (T=25°C): 128A. Idss (max): 250uA. On-resistance Rds On: 0.0046 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 4750pF. Cost): 420pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 512A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 56A, 80A, 250uA, 0.55 Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 56A. ID (T=25°C): 80A. Idss (max): 250uA. On-resistance Rds On: 0.55 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 3070pF. Cost): 280pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. G-S Protection: no. Id(imp): 310A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 12A, 17A, 250uA, 80m Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 80m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 800pF. Cost): 74pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 64 ns. Type of transistor: MOSFET. Function: Key parameters optimized for Class-D audio. G-S Protection: no. Id(imp): 51A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 7 ns. Technology: Digital Audio MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4.9V. Vgs(th) min.: 3V

N-channel transistor, 13A, 18A, 250uA, 80m Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 80m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1200pF. Cost): 91pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 82 ns. Type of transistor: MOSFET. Function: Key parameters optimized for Class-D audio. G-S Protection: no. Id(imp): 52A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 7.8 ns. Technology: Digital Audio MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 4.9V. Vgs(th) min.: 3V

N-channel transistor, 130A, 60.4k Ohms, 250uA, 3.7m Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 130A. ID (T=25°C): 60.4k Ohms. Idss (max): 250uA. On-resistance Rds On: 3.7m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 9620pF. Cost): 670pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: PDP Switch. G-S Protection: no. Id(imp): 670A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 370W. RoHS: yes. Weight: 1.99g. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 78 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 74A, 104A, 250uA, 0.0093 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 74A. ID (T=25°C): 104A. Idss (max): 250uA. On-resistance Rds On: 0.0093 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 5270pF. Cost): 490pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 86 ns. Type of transistor: MOSFET. Function: High Efficiency Synchronous Rectification in SMPS, High Speed Power Switching. G-S Protection: no. Id(imp): 420A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 380W. RoHS: yes. Weight: 1.99g. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 41 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 3V

N-channel transistor, 46A, 65A, 1mA, 19.7m Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. On-resistance Rds On: 19.7m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP Switch. G-S Protection: no. Id(imp): 260A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V