N-channel transistor, 21A, 31A, 250uA, 0.082 Ohms, TO-220, TO-220AB, 200V - IRFB31N20D

Quantity	excl. VAT	VAT incl.
1 - 4	2.89$	2.89$
5 - 9	2.74$	2.74$
10 - 24	2.65$	2.65$
25 - 49	2.60$	2.60$
50 - 99	2.54$	2.54$
100 - 249	2.45$	2.45$
250+	2.37$	2.37$

Quantity	U.P
1 - 4	2.89$	2.89$
5 - 9	2.74$	2.74$
10 - 24	2.65$	2.65$
25 - 49	2.60$	2.60$
50 - 99	2.54$	2.54$
100 - 249	2.45$	2.45$
250+	2.37$	2.37$

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Set of 1

N-channel transistor, 21A, 31A, 250uA, 0.082 Ohms, TO-220, TO-220AB, 200V - IRFB31N20D. N-channel transistor, 21A, 31A, 250uA, 0.082 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 21A. ID (T=25°C): 31A. Idss (max): 250uA. On-resistance Rds On: 0.082 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 2370pF. Cost): 390pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Function: SMPS, High frequency DC-DC converters. G-S Protection: no. Id(imp): 124A. IDss (min): 25uA. Marking on the case: FB32N20D. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Original product from manufacturer International Rectifier. Quantity in stock updated on 18/06/2025, 09:25.

Technical documentation

N-channel transistor, 21A, 31A, 250uA, 0.082 Ohms, TO-220, TO-220AB, 200V - IRFB31N20D

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