N-channel FETs and MOSFETs

N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Function: N MOSFET transistor. Equivalents: IRF7313PBF. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Quantity per case: 2

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 6.5A/6.5A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 6.5A/6.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7313. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.029 Ohms @ 5.8A/5.8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 650pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 6.5A/6.5A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 6.5A/6.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7313. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.029 Ohms @ 5.8A/5.8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 650pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 6.6A / -5.3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 6.6A / -5.3A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7317. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.058 Ohms @ 6/-2.9A. Switch-on time ton [nsec.]: 12/22 ns. Switch-off delay tf[nsec.]: 57/63 ns. Ciss Gate Capacitance [pF]: 900/780pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Channel type: N. Conditioning: plastic tube. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Quantity per case: 2. Conditioning unit: 95. Function: tf 13ns, td(on) 8.3ns, td(off) 32ns

N-channel transistor, PCB soldering (SMD), SO8, 55V/-55V, 4.7A/-3.4A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 55V/-55V. Drain Current Id [A] @ 25°C: 4.7A/-3.4A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7343. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.105 Ohms @ 4.7/-3.4A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12/22 ns. Switch-off delay tf[nsec.]: 48/64 ns. Ciss Gate Capacitance [pF]: 740/690pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 55V/-55V, 4.7A/-3.4A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 55V/-55V. Drain Current Id [A] @ 25°C: 4.7A/-3.4A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7343. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.105 Ohms @ 4.7/-3.4A. Switch-on time ton [nsec.]: 12/22 ns. Switch-off delay tf[nsec.]: 48/64 ns. Ciss Gate Capacitance [pF]: 740/690pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 5.9A/-4.2A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 5.9A/-4.2A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7389. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.058 Ohms @ 5.8/-4.9A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 8.1 ns/13 ns. Switch-off delay tf[nsec.]: 26/34 ns. Ciss Gate Capacitance [pF]: 650/710pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 6.3A, 10A, 250uA, 0.55 Ohms, TO-220, TO-220AB, 400V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 250uA. On-resistance Rds On: 0.55 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 1400pF. Cost): 330pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Fast Switching Power MOSFET transistor. Id(imp): 40A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 4 v. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 400V, 10A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 10A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF740LC. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.55 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 1100pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 400V, 10A, TO-220, 400V. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 10A. Housing: TO-220. Drain-source voltage (Vds): 400V. Number of terminals: 3. Manufacturer's marking: IRF740PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.55 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 50 ns. Ciss Gate Capacitance [pF]: 1400pF. Maximum dissipation Ptot [W]: 125W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 10A. Power: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 400V, 10A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 10A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRF740SPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.55 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 50 ns. Ciss Gate Capacitance [pF]: 1400pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 9.2A, 13A, 25uA, 0.011 Ohms, SO, SO-8, 30 v. ID (T=100°C): 9.2A. ID (T=25°C): 13A. Idss (max): 25uA. On-resistance Rds On: 0.011 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1600pF. Cost): 680pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 74 ns. Type of transistor: MOSFET. Id(imp): 58A. IDss (min): 12uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 8.6 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 13A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 13A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7413. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 7.3A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 8.6 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 1800pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 9.2A, 13A, 150uA, SO, SO-8, 30 v, 0.008 Ohms. ID (T=100°C): 9.2A. ID (T=25°C): 13A. Idss (max): 150uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. On-resistance Rds On: 0.008 Ohms. C(in): 1210pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Function: Ultra-Low Gate Impedance. Id(imp): 100A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11 ns. Td(on): 8.7 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V. Quantity per case: 1. Conditioning unit: 95. G-S Protection: no

N-channel transistor, 12A, 15A, 100uA, 0.006 Ohms, SO, SO-8, 30 v. ID (T=100°C): 12A. ID (T=25°C): 15A. Idss (max): 100uA. On-resistance Rds On: 0.006 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 3480pF. Cost): 870pF. Channel type: N. Trr Diode (Min.): 64 ns. Type of transistor: MOSFET. Function: SMPS MOSFET, High Frequency DC-DC Converters. Id(imp): 60.4k Ohms. IDss (min): 20uA. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 51 ns. Td(on): 17 ns. Technology: V-MOS. Operating temperature: -50...+150°C. Gate/source voltage Vgs: 12V. Vgs(th) max.: 2V. Vgs(th) min.: 0.6V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 15A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 15A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7455. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0075 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 3480pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 40V, 9.4A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 9.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7468. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0015 Ohms @ 9.4A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 7.6 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 2460pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 6.6A, 8.3A, 150uA, 0.017 Ohms, SO, SO-8, 30 v. ID (T=100°C): 6.6A. ID (T=25°C): 8.3A. Idss (max): 150uA. On-resistance Rds On: 0.017 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Drain-source protection : Zener diode. Type of transistor: MOSFET. Function: integrated circuit for DC-DC converters. Id(imp): 66A. IDss (min): 30uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 12 ns. Technology: HEXFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 12V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no

N-channel transistor, 6.6A, 8.3A, 100uA, 0.017 Ohms, SO, SO-8, 30 v. ID (T=100°C): 6.6A. ID (T=25°C): 8.3A. Idss (max): 100uA. On-resistance Rds On: 0.017 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Drain-source protection : diode. Type of transistor: MOSFET. Function: integrated circuit for DC-DC converters. Id(imp): 66A. IDss (min): 20uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11 ns. Td(on): 6.3 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no

N-channel transistor, 8.7A, 11A, 150uA, 0.011 Ohms, SO, SO-8, 30 v. ID (T=100°C): 8.7A. ID (T=25°C): 11A. Idss (max): 150uA. On-resistance Rds On: 0.011 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 770pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 31us. Type of transistor: MOSFET. Function: integrated circuit for DC-DC converters. Id(imp): 88A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 10 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V. Quantity per case: 1. G-S Protection: no

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 10.8A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 10.8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7811. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 8.6 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 1801pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 13.6A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 13.6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7821. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0091 Ohms @ 13A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 6.3 ns. Switch-off delay tf[nsec.]: 9.7 ns. Ciss Gate Capacitance [pF]: 1010pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +155°C

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 21A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 21A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7831. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0036 Ohms @ 20A. Gate breakdown voltage Ugs [V]: 2.35V. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 17 ns. Ciss Gate Capacitance [pF]: 6240pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 20A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 20A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7831. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.004 Ohms @ 20A. Gate breakdown voltage Ugs [V]: 2.32V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 4310pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +155°C