N-channel FETs and MOSFETs

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 400V, 10A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 10A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRF740SPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.55 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 50 ns. Ciss Gate Capacitance [pF]: 1400pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 9.2A, 13A, 25uA, 0.011 Ohms, SO, SO-8, 30 v. ID (T=100°C): 9.2A. ID (T=25°C): 13A. Idss (max): 25uA. On-resistance Rds On: 0.011 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1600pF. Cost): 680pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 74 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 58A. IDss (min): 12uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 8.6 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 13A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 13A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7413. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 7.3A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 8.6 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 1800pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 9.2A, 13A, 150uA, 0.008 Ohms, SO, SO-8, 30 v. ID (T=100°C): 9.2A. ID (T=25°C): 13A. Idss (max): 150uA. On-resistance Rds On: 0.008 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1210pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 95. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Function: Ultra-Low Gate Impedance. G-S Protection: no. Id(imp): 100A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11 ns. Td(on): 8.7 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V

N-channel transistor, 12A, 15A, 100uA, 0.006 Ohms, SO, SO-8, 30 v. ID (T=100°C): 12A. ID (T=25°C): 15A. Idss (max): 100uA. On-resistance Rds On: 0.006 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 3480pF. Cost): 870pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 64 ns. Type of transistor: MOSFET. Function: SMPS MOSFET, High Frequency DC-DC Converters. G-S Protection: yes. Id(imp): 60.4k Ohms. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 51 ns. Td(on): 17 ns. Technology: V-MOS. Operating temperature: -50...+150°C. Gate/source voltage Vgs: 12V. Vgs(th) max.: 2V. Vgs(th) min.: 0.6V

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 15A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 15A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7455. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0075 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 3480pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 40V, 9.4A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 9.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7468. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0015 Ohms @ 9.4A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 7.6 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 2460pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 6.6A, 8.3A, 150uA, 0.017 Ohms, SO, SO-8, 30 v. ID (T=100°C): 6.6A. ID (T=25°C): 8.3A. Idss (max): 150uA. On-resistance Rds On: 0.017 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Type of transistor: MOSFET. Function: integrated circuit for DC-DC converters. G-S Protection: no. Id(imp): 66A. IDss (min): 30uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 12 ns. Technology: HEXFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 12V. Vgs(th) min.: 1V

N-channel transistor, 6.6A, 8.3A, 100uA, 0.017 Ohms, SO, SO-8, 30 v. ID (T=100°C): 6.6A. ID (T=25°C): 8.3A. Idss (max): 100uA. On-resistance Rds On: 0.017 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: integrated circuit for DC-DC converters. G-S Protection: no. Id(imp): 66A. IDss (min): 20uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11 ns. Td(on): 6.3 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 8.7A, 11A, 150uA, 0.011 Ohms, SO, SO-8, 30 v. ID (T=100°C): 8.7A. ID (T=25°C): 11A. Idss (max): 150uA. On-resistance Rds On: 0.011 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 770pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 31us. Type of transistor: MOSFET. Function: integrated circuit for DC-DC converters. G-S Protection: no. Id(imp): 88A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 10 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 10.8A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 10.8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7811. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 8.6 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 1801pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 13.6A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 13.6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7821. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0091 Ohms @ 13A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 6.3 ns. Switch-off delay tf[nsec.]: 9.7 ns. Ciss Gate Capacitance [pF]: 1010pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +155°C

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 21A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 21A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7831. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0036 Ohms @ 20A. Gate breakdown voltage Ugs [V]: 2.35V. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 17 ns. Ciss Gate Capacitance [pF]: 6240pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 20A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 20A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7831. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.004 Ohms @ 20A. Gate breakdown voltage Ugs [V]: 2.32V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 4310pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +155°C

N-channel transistor, 57A, 80A, 250uA, 12m Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. On-resistance Rds On: 12m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 3850pF. Cost): 480pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. G-S Protection: no. Id(imp): 320A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 260W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 61 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 57A, 80A, 250uA, 12m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. On-resistance Rds On: 12m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. C(in): 3850pF. Cost): 480pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 99 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. G-S Protection: no. Id(imp): 320A. IDss (min): 20uA. Number of terminals: 2. Pd (Power Dissipation, Max): 260W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 61 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 1.6A, 2.5A, 250uA, 3 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 1.6A. ID (T=25°C): 2.5A. Idss (max): 250uA. On-resistance Rds On: 3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 360pF. Cost): 92pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 8A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 33 ns. Td(on): 8 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 500V, 4A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF820PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 3 Ohms @ 1.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 33 ns. Ciss Gate Capacitance [pF]: 360pF. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 2.9A, 4.5A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 2.9A. ID (T=25°C): 4.5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 320 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 18A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 3.2A, 5A, 250uA, 1.4 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 3.2A. ID (T=25°C): 5A. Idss (max): 250uA. On-resistance Rds On: 1.4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 620 ns. Cost): 93 ns. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 20A. IDss (min): 25uA. Temperature: +105°C. Pd (Power Dissipation, Max): 74W. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 500V, 4.5A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 4.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF830PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ 2.7A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.2 ns. Switch-off delay tf[nsec.]: 42 ns. Ciss Gate Capacitance [pF]: 610pF. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 4.8A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 4.8A. ID (T=25°C): 8A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1300pF. Cost): 310pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 32A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 5.1A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1018pF. Cost): 155pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 32A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 500V, 8A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 8A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF840APBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 26 ns. Ciss Gate Capacitance [pF]: 1018pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 5.1A, 8A, 250uA, 0.85 Ohms, D2PAK ( TO-263 ), TO-263AB, 500V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263AB. Voltage Vds(max): 500V. C(in): 1018pF. Cost): 155pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 32A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V