N-channel transistor, 6.6A, 8.3A, 100uA, 0.017 Ohms, SO, SO-8, 30 v - IRF7807V

Quantity	excl. VAT	VAT incl.
1 - 4	1.29$	1.29$
5 - 9	1.23$	1.23$
10 - 24	1.16$	1.16$
25 - 49	1.10$	1.10$
50 - 68	1.07$	1.07$

Quantity	U.P
1 - 4	1.29$	1.29$
5 - 9	1.23$	1.23$
10 - 24	1.16$	1.16$
25 - 49	1.10$	1.10$
50 - 68	1.07$	1.07$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 68

Set of 1

N-channel transistor, 6.6A, 8.3A, 100uA, 0.017 Ohms, SO, SO-8, 30 v - IRF7807V. N-channel transistor, 6.6A, 8.3A, 100uA, 0.017 Ohms, SO, SO-8, 30 v. ID (T=100°C): 6.6A. ID (T=25°C): 8.3A. Idss (max): 100uA. On-resistance Rds On: 0.017 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Drain-source protection : diode. Type of transistor: MOSFET. Function: integrated circuit for DC-DC converters. Id(imp): 66A. IDss (min): 20uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11 ns. Td(on): 6.3 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 20/04/2025, 11:25.

Technical documentation

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!