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Semiconductors Transistors

MJE2955T-CDIL

MJE2955T-CDIL
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.82$ 0.82$
5 - 9 0.78$ 0.78$
10 - 24 0.74$ 0.74$
25 - 49 0.70$ 0.70$
50 - 96 0.68$ 0.68$
Quantity U.P
1 - 4 0.82$ 0.82$
5 - 9 0.78$ 0.78$
10 - 24 0.74$ 0.74$
25 - 49 0.70$ 0.70$
50 - 96 0.68$ 0.68$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 96
Set of 1

MJE2955T-CDIL. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: for Hi-fi audio amplifiers and switching regulators. Max hFE gain: 100. Minimum hFE gain: 20. Collector current: 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) MJE3055T. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 02:25.

Equivalent products :

Quantity in stock : 509
MJE2955T

MJE2955T

Housing: TO-220. Resistor B: Power Transistor. BE resistor: -70V. C(in): -10A. Cost): 90W. Quantity ...
MJE2955T
Housing: TO-220. Resistor B: Power Transistor. BE resistor: -70V. C(in): -10A. Cost): 90W. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 10A. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) MJE3055T. BE diode: no. CE diode: no
MJE2955T
Housing: TO-220. Resistor B: Power Transistor. BE resistor: -70V. C(in): -10A. Cost): 90W. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 10A. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) MJE3055T. BE diode: no. CE diode: no
Set of 1
0.77$ VAT incl.
(0.77$ excl. VAT)
0.77$

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