Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.01$ | 1.01$ |
5 - 9 | 0.96$ | 0.96$ |
10 - 24 | 0.91$ | 0.91$ |
25 - 49 | 0.86$ | 0.86$ |
50 - 99 | 0.84$ | 0.84$ |
100 - 229 | 0.74$ | 0.74$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.01$ | 1.01$ |
5 - 9 | 0.96$ | 0.96$ |
10 - 24 | 0.91$ | 0.91$ |
25 - 49 | 0.86$ | 0.86$ |
50 - 99 | 0.84$ | 0.84$ |
100 - 229 | 0.74$ | 0.74$ |
KBU6J. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 6A. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Equivalents: KBU6J, KBU606, RS605. Pitch: 5.08x5.08mm. Dimensions: 23x19x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 600V. Quantity per case: 4. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms). Quantity in stock updated on 06/04/2025, 10:25.
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