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Semiconductors Diodes Diode rectifier bridges

B500C5000A

B500C5000A
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.85$ 1.85$
5 - 9 1.75$ 1.75$
10 - 24 1.66$ 1.66$
25 - 35 1.57$ 1.57$
Quantity U.P
1 - 4 1.85$ 1.85$
5 - 9 1.75$ 1.75$
10 - 24 1.66$ 1.66$
25 - 35 1.57$ 1.57$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 35
Set of 1

B500C5000A. Cj: 15pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 30A. MRI (max): 500uA. MRI (min): 10uA. Equivalents: C5000/3300A, RS505. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 40x21.7x6.5mm. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 500V. Quantity in stock updated on 24/12/2024, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 18
B500C7000A

B500C7000A

Forward current (AV): 7A. IFSM: 150A. MRI (min): 5uA. Number of terminals: 4. Pitch: 10x7.5x7.5mm. R...
B500C7000A
Forward current (AV): 7A. IFSM: 150A. MRI (min): 5uA. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 32x17x5.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Vrms: 500V
B500C7000A
Forward current (AV): 7A. IFSM: 150A. MRI (min): 5uA. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 32x17x5.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Vrms: 500V
Set of 1
2.83$ VAT incl.
(2.83$ excl. VAT)
2.83$
Quantity in stock : 235
KBU6J

KBU6J

Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. For...
KBU6J
Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 6A. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Equivalents: KBU6J, KBU606, RS605. Pitch: 5.08x5.08mm. Dimensions: 23x19x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 600V. Quantity per case: 4. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms)
KBU6J
Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 6A. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Equivalents: KBU6J, KBU606, RS605. Pitch: 5.08x5.08mm. Dimensions: 23x19x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 600V. Quantity per case: 4. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms)
Set of 1
1.01$ VAT incl.
(1.01$ excl. VAT)
1.01$

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Quantity in stock : 136
RFT-3-15A

RFT-3-15A

Max Continuous current: 3.15A. Fuse properties: time delay fuse (T). Voltage: 250V. Pitch: 5.1mm. ...
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KBL06

KBL06

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TL494CN

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GBI10G

GBI10G

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-pha...
GBI10G
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Quantity in stock : 34
S1WBS60

S1WBS60

Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 1A. Pitch...
S1WBS60
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MOF1145JAFSR750

MOF1145JAFSR750

Resistance: 0.75 Ohms. Power: 2W. Tolerance: 5%. Dimensions: 5x15.5mm. Maximum operating voltage: 60...
MOF1145JAFSR750
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1N4007

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VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor mate...
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