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Electronic components and equipment, for businesses and individuals

2SC3503

2SC3503
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Quantity excl. VAT VAT incl.
1 - 4 1.28$ 1.28$
5 - 9 1.22$ 1.22$
10 - 24 1.16$ 1.16$
25 - 49 1.09$ 1.09$
50 - 84 1.07$ 1.07$
Quantity U.P
1 - 4 1.28$ 1.28$
5 - 9 1.22$ 1.22$
10 - 24 1.16$ 1.16$
25 - 49 1.09$ 1.09$
50 - 84 1.07$ 1.07$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 84
Set of 1

2SC3503. Cost): 2.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 120. Minimum hFE gain: 60. Collector current: 0.1A. Ic(pulse): 0.2A. Marking on the case: C3503-D. Temperature: +150°C. Pd (Power Dissipation, Max): 7W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-126F. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 300V. Number of terminals: 3. Quantity per case: 1. Function: Audio Voltage Amplifier, CRT Definition, Video Output. Spec info: complementary transistor (pair) 2SA1381. BE diode: no. CE diode: no. Quantity in stock updated on 27/12/2024, 05:25.

Equivalent products :

Quantity in stock : 84
MJE340-ONS

MJE340-ONS

Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L, VID....
MJE340-ONS
Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L, VID.. Collector current: 0.5A. Equivalents: KSE340. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126 ( TO-225 ). Type of transistor: NPN. Vcbo: 300V. Collector/emitter voltage Vceo: 500V. Spec info: complementary transistor (pair) MJE350. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
MJE340-ONS
Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L, VID.. Collector current: 0.5A. Equivalents: KSE340. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126 ( TO-225 ). Type of transistor: NPN. Vcbo: 300V. Collector/emitter voltage Vceo: 500V. Spec info: complementary transistor (pair) MJE350. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
Set of 1
0.97$ VAT incl.
(0.97$ excl. VAT)
0.97$

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Quantity in stock : 27
IRFP9140N

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C(in): 1300pF. Cost): 400pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type o...
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MJE340

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MJE350-ONS

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C(in): 7pF. Cost): 110pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE...
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2SA1302

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Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector cu...
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Quantity in stock : 7694
2N5551

2N5551

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Qu...
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2N5401

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RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration...
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Quantity in stock : 24
IRFP140N

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Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: PowerMOSFET. ID (T=100Â...
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2SC3281

2SC3281

Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Collector current: 15A. Pd (Power...
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Quantity in stock : 51
IRFP150

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C(in): 2800pF. Cost): 1100pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Qu...
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IRFP150N

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