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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 0.07A, TO-92, SANYO--MP, 160V - 2SA1208

NPN-Transistor, 0.07A, TO-92, SANYO--MP, 160V - 2SA1208
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Quantity excl. VAT VAT incl.
1 - 4 1.26$ 1.26$
Quantity U.P
1 - 4 1.26$ 1.26$
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Quantity in stock : 4
Set of 1

NPN-Transistor, 0.07A, TO-92, SANYO--MP, 160V - 2SA1208. NPN-Transistor, 0.07A, TO-92, SANYO--MP, 160V. Collector current: 0.07A. Housing: TO-92. Housing (according to data sheet): SANYO--MP. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High-Voltage Switching. Ic(pulse): 0.14A. Note: 9mm height. Pd (Power Dissipation, Max): 0.9W. Type of transistor: PNP. Vcbo: 180V. Saturation voltage VCE(sat): 0.14V. Maximum saturation voltage VCE(sat): 0.4V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2910. Quantity in stock updated on 12/04/2025, 18:25.

Technical documentation

Equivalent products :

Quantity in stock : 18
2SA1370

2SA1370

NPN-Transistor, 100mA, TO-92, TO-92M ( 9mm ), 200V. Collector current: 100mA. Housing: TO-92. Housin...
2SA1370
NPN-Transistor, 100mA, TO-92, TO-92M ( 9mm ), 200V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 200V. C(in): 1.7pF. Cost): 2.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 320. Minimum hFE gain: 40. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V. Function: video. BE diode: no. CE diode: no
2SA1370
NPN-Transistor, 100mA, TO-92, TO-92M ( 9mm ), 200V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 200V. C(in): 1.7pF. Cost): 2.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 320. Minimum hFE gain: 40. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V. Function: video. BE diode: no. CE diode: no
Set of 1
2.39$ VAT incl.
(2.39$ excl. VAT)
2.39$

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