Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.39$ | 2.39$ |
5 - 9 | 2.27$ | 2.27$ |
10 - 20 | 2.15$ | 2.15$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.39$ | 2.39$ |
5 - 9 | 2.27$ | 2.27$ |
10 - 20 | 2.15$ | 2.15$ |
2SA1370. C(in): 1.7pF. Cost): 2.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 320. Minimum hFE gain: 40. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 200V. Vebo: 5V. Function: video. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 17:25.
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