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2N7000-ONS

2N7000-ONS
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.39$ 0.39$
10 - 24 0.37$ 0.37$
25 - 49 0.35$ 0.35$
50 - 99 0.33$ 0.33$
100 - 124 0.33$ 0.33$
Quantity U.P
1 - 9 0.39$ 0.39$
10 - 24 0.37$ 0.37$
25 - 49 0.35$ 0.35$
50 - 99 0.33$ 0.33$
100 - 124 0.33$ 0.33$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 124
Set of 1

2N7000-ONS. C(in): 60pF. Cost): 25pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 0.5A. ID (T=25°C): 0.2A. Idss (max): 1000uA. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. On-resistance Rds On: 5 Ohms. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 00:25.

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Quantity in stock : 9137
BS170

BS170

C(in): 24pF. Cost): 40pF. Channel type: N. Drain-source protection : Zener diode. Type of transistor...
BS170
C(in): 24pF. Cost): 40pF. Channel type: N. Drain-source protection : Zener diode. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 1.2A. ID (T=25°C): 0.5A. Idss (max): 10nA. IDss (min): 0.5uA. Marking on the case: BS170. Pd (Power Dissipation, Max): 0.83W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Technology: Field effect transistor. Small signals. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
BS170
C(in): 24pF. Cost): 40pF. Channel type: N. Drain-source protection : Zener diode. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 1.2A. ID (T=25°C): 0.5A. Idss (max): 10nA. IDss (min): 0.5uA. Marking on the case: BS170. Pd (Power Dissipation, Max): 0.83W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Technology: Field effect transistor. Small signals. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
0.23$ VAT incl.
(0.23$ excl. VAT)
0.23$
Quantity in stock : 114
2N7000

2N7000

C(in): 60pF. Cost): 25pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp)...
2N7000
C(in): 60pF. Cost): 25pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 0.5A. ID (T=25°C): 0.2A. Idss (max): 1000uA. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. On-resistance Rds On: 5 Ohms. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Housing: TO-92. Housing (according to data sheet): O-92Ammo-Pack. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V. Drain-source protection : yes. G-S Protection: no
2N7000
C(in): 60pF. Cost): 25pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 0.5A. ID (T=25°C): 0.2A. Idss (max): 1000uA. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. On-resistance Rds On: 5 Ohms. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Housing: TO-92. Housing (according to data sheet): O-92Ammo-Pack. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V. Drain-source protection : yes. G-S Protection: no
Set of 5
0.84$ VAT incl.
(0.84$ excl. VAT)
0.84$

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LM393P

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