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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, TO-92, 60V - 2N7000-ONS

N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, TO-92, 60V - 2N7000-ONS
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.39$ 0.39$
10 - 24 0.37$ 0.37$
25 - 37 0.36$ 0.36$
Quantity U.P
1 - 9 0.39$ 0.39$
10 - 24 0.37$ 0.37$
25 - 37 0.36$ 0.36$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 37
Set of 1

N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, TO-92, 60V - 2N7000-ONS. N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, TO-92, 60V. ID (T=25°C): 0.2A. Idss (max): 1000uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 60V. C(in): 60pF. Cost): 25pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 0.5A. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V. Original product from manufacturer Diotec Semiconductor. Quantity in stock updated on 12/08/2025, 14:08.

Equivalent products :

Quantity in stock : 1554
BS170

BS170

N-channel transistor, TO-92, 0.5A, 10nA, 1.2 Ohms, TO-92, 60V. Housing: TO-92. ID (T=25°C): 0.5A. I...
BS170
N-channel transistor, TO-92, 0.5A, 10nA, 1.2 Ohms, TO-92, 60V. Housing: TO-92. ID (T=25°C): 0.5A. Idss (max): 10nA. On-resistance Rds On: 1.2 Ohms. Housing (according to data sheet): TO-92. Voltage Vds(max): 60V. Channel type: N. C(in): 24pF. Cost): 40pF. Drain-source protection : Zener diode. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: no. Id(imp): 1.2A. IDss (min): 0.5uA. Marking on the case: BS170. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Technology: Field effect transistor. Small signals. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V
BS170
N-channel transistor, TO-92, 0.5A, 10nA, 1.2 Ohms, TO-92, 60V. Housing: TO-92. ID (T=25°C): 0.5A. Idss (max): 10nA. On-resistance Rds On: 1.2 Ohms. Housing (according to data sheet): TO-92. Voltage Vds(max): 60V. Channel type: N. C(in): 24pF. Cost): 40pF. Drain-source protection : Zener diode. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: no. Id(imp): 1.2A. IDss (min): 0.5uA. Marking on the case: BS170. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Technology: Field effect transistor. Small signals. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 972
2N7000

2N7000

N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, O-92Ammo-Pack, 60V. ID (T=25°C): 0.2A. Idss (max...
2N7000
N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, O-92Ammo-Pack, 60V. ID (T=25°C): 0.2A. Idss (max): 1000uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): O-92Ammo-Pack. Voltage Vds(max): 60V. C(in): 60pF. Cost): 25pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 0.5A. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V
2N7000
N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, O-92Ammo-Pack, 60V. ID (T=25°C): 0.2A. Idss (max): 1000uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): O-92Ammo-Pack. Voltage Vds(max): 60V. C(in): 60pF. Cost): 25pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 0.5A. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V
Set of 1
0.15$ VAT incl.
(0.15$ excl. VAT)
0.15$

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Quantity in stock : 1554
BS170

BS170

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2N3906

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LM393P

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RoHS: yes. Function: Voltage comparator. Number of terminals: 8. Assembly/installation: PCB through-...
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LM358P

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BC237B

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NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according...
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