Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.39$ | 0.39$ |
10 - 24 | 0.37$ | 0.37$ |
25 - 49 | 0.35$ | 0.35$ |
50 - 99 | 0.33$ | 0.33$ |
100 - 124 | 0.33$ | 0.33$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.39$ | 0.39$ |
10 - 24 | 0.37$ | 0.37$ |
25 - 49 | 0.35$ | 0.35$ |
50 - 99 | 0.33$ | 0.33$ |
100 - 124 | 0.33$ | 0.33$ |
2N7000-ONS. C(in): 60pF. Cost): 25pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 0.5A. ID (T=25°C): 0.2A. Idss (max): 1000uA. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. On-resistance Rds On: 5 Ohms. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 00:25.
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