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Semiconductors Transistors

2N3055-CDIL

2N3055-CDIL
Quantity excl. VAT VAT incl.
1 - 4 2.14$ 2.14$
5 - 9 2.03$ 2.03$
10 - 24 1.93$ 1.93$
25 - 49 1.82$ 1.82$
50 - 95 1.78$ 1.78$
Quantity U.P
1 - 4 2.14$ 2.14$
5 - 9 2.03$ 2.03$
10 - 24 1.93$ 1.93$
25 - 49 1.82$ 1.82$
50 - 95 1.78$ 1.78$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 95
Set of 1

2N3055-CDIL. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 16:25.

Equivalent products :

Quantity in stock : 50
2N3055-ONS

2N3055-ONS

Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear...
2N3055-ONS
Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no
2N3055-ONS
Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no
Set of 1
12.19$ VAT incl.
(12.19$ excl. VAT)
12.19$

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2N1711

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Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70MHz. Collector current: 50...
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2N2211A

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2N5416

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C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Functio...
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Quantity in stock : 49
2N2906

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Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Colle...
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Quantity in stock : 4350
1206S4J-039-JT5E

1206S4J-039-JT5E

Resistance: 3.9 Ohms. Power: 0.25W. Dimensions: 3.2x1.6x0.6. RoHS: yes. Assembly/installation: surfa...
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Quantity in stock : 517
2N2219A

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RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): 25pF. Cost): 8pF. Quantity per case: ...
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Quantity in stock : 66
2N2904A

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Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Switching Transistor. ...
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Quantity in stock : 96
1-2176430-0

1-2176430-0

Nominal dissipation [W @ °C]: 35W. Resistance: 3.3 Ohms. RoHS: yes. Component family: Metal Film Re...
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11.46$ VAT incl.
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11.46$

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