ZTX649

Quantity	excl. VAT	VAT incl.
1 - 4	2.77$	2.77$
5 - 9	2.64$	2.64$
10 - 24	2.50$	2.50$
25 - 49	2.36$	2.36$
50 - 99	2.30$	2.30$
100 - 249	2.25$	2.25$
250+	2.14$	2.14$

Quantity	U.P
1 - 4	2.77$	2.77$
5 - 9	2.64$	2.64$
10 - 24	2.50$	2.50$
25 - 49	2.36$	2.36$
50 - 99	2.30$	2.30$
100 - 249	2.25$	2.25$
250+	2.14$	2.14$

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

ZTX649. Cost): 50pF. Semiconductor material: silicon. FT: 240 MHz. Max hFE gain: 300. Minimum hFE gain: 15. Collector current: 2A. Ic(pulse): 6A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 35V. Saturation voltage VCE(sat): 0.23V. Collector/emitter voltage Vceo: 25V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 19:25.

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Delivery in 2-3 days, with postal tracking!