Dielectric structure: unidirectional. Semiconductor material: silicon. Breakdown voltage: 5V. Pd (Power Dissipation, Max): 1.5 kW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 (5.5x9.5mm). Leakage current on closing Ir [A] @ Uz [V]: 300uA @ 5V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 1500W @ 1ms. Number of terminals: 2. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Function: transil diode, overvoltage protection