Housing: DO-15. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Dielectric structure: bidirectional. Semiconductor material: silicon. Function: overvoltage protection, bidirectional protective diode. Breakdown voltage: 25.6V 1uA, 28.5V 1mA, clamping 41.5V 14.5A, 53.5V 75A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Power: 1.7 W (600W Peak Pulse TA=25°C, Tp=1ms). Housing (according to data sheet): DO-15 (6.3x3mm). Tolerance: 5%. Operating temperature: -60...+175°C. Spec info: 600W / 1ms, VRM 25.6V