Ubr [V] @ Ibr [A]: 20V @ 1mA. Ubr [V] @ Ibr [A]: 21V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 17.1V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 1500W @ 1ms. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Dielectric structure: unidirectional. Semiconductor material: silicon. Function: protection against overvoltage. IFSM: 200A. Pd (Power Dissipation, Max): 1.5 kW. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 5V. Forward voltage Vf (min): 3.5V. VRRM: 20V