Dielectric structure: bidirectional. Semiconductor material: silicon. Function: protection against overvoltage. IFSM: 200A. Breakdown voltage: 400V. Pd (Power Dissipation, Max): 1.5 kW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 (9x5.3mm). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 5V. Forward voltage Vf (min): 3.5V