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TIP110

TIP110
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.94$ 0.94$
5 - 9 0.89$ 0.89$
10 - 24 0.85$ 0.85$
25 - 25 0.80$ 0.80$
Quantity U.P
1 - 4 0.94$ 0.94$
5 - 9 0.89$ 0.89$
10 - 24 0.85$ 0.85$
25 - 25 0.80$ 0.80$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 25
Set of 1

TIP110. Darlington transistor?: yes. Semiconductor material: silicon. Max hFE gain: 1000. Minimum hFE gain: 500. Collector current: 2A. Ic(pulse): 4A. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Note: >1000. Spec info: 10k Ohms (R1), 600 Ohms (R2). Quantity in stock updated on 24/12/2024, 14:25.

Equivalent products :

Quantity in stock : 3667
TIP122

TIP122

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-22...
TIP122
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP122. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 5A. Cutoff frequency ft [MHz]: silicon. Maximum dissipation Ptot [W]: 65W. Minimum hFE gain: 1000. Collector current: 5A. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) TIP127
TIP122
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP122. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 5A. Cutoff frequency ft [MHz]: silicon. Maximum dissipation Ptot [W]: 65W. Minimum hFE gain: 1000. Collector current: 5A. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) TIP127
Set of 1
0.71$ VAT incl.
(0.71$ excl. VAT)
0.71$

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TIP127

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1N4007

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NE555P

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LM317T

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TIP36C

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RoHS: yes. Housing: PCB soldering. Housing: TO-247. Housing (JEDEC standard): 45pF. Configuration: P...
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LM358P

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