Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.94$ | 0.94$ |
5 - 9 | 0.89$ | 0.89$ |
10 - 24 | 0.85$ | 0.85$ |
25 - 25 | 0.80$ | 0.80$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.94$ | 0.94$ |
5 - 9 | 0.89$ | 0.89$ |
10 - 24 | 0.85$ | 0.85$ |
25 - 25 | 0.80$ | 0.80$ |
TIP110. Darlington transistor?: yes. Semiconductor material: silicon. Max hFE gain: 1000. Minimum hFE gain: 500. Collector current: 2A. Ic(pulse): 4A. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Note: >1000. Spec info: 10k Ohms (R1), 600 Ohms (R2). Quantity in stock updated on 24/12/2024, 14:25.
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