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Semiconductors Transistors

SUD15N06-90L

SUD15N06-90L
Quantity excl. VAT VAT incl.
1 - 4 3.79$ 3.79$
5 - 9 3.60$ 3.60$
10 - 24 3.41$ 3.41$
25 - 49 3.22$ 3.22$
50 - 99 3.14$ 3.14$
100 - 249 3.07$ 3.07$
250+ 2.95$ 2.95$
Quantity U.P
1 - 4 3.79$ 3.79$
5 - 9 3.60$ 3.60$
10 - 24 3.41$ 3.41$
25 - 49 3.22$ 3.22$
50 - 99 3.14$ 3.14$
100 - 249 3.07$ 3.07$
250+ 2.95$ 2.95$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

SUD15N06-90L. Channel type: N. Type of transistor: MOSFET. Id(imp): 30A. ID (T=100°C): 12A. ID (T=25°C): 15A. Idss (max): 15A. Pd (Power Dissipation, Max): 37W. On-resistance Rds On: 0.05 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 7 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. Number of terminals: 3. Technology: (D-S) 175°C MOSFET, Logic Level. Quantity per case: 1. Quantity in stock updated on 24/12/2024, 14:25.

Technical documentation

Equivalent products :

Quantity in stock : 180
IRFR024N

IRFR024N

C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per cas...
IRFR024N
C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Id(imp): 68A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.075 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
IRFR024N
C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Id(imp): 68A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.075 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
1.08$ VAT incl.
(1.08$ excl. VAT)
1.08$

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IPD050N03L-GATMA1

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FRN01WK0101A10

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IRLR2905

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