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Semiconductors Transistors

STW11NK100Z

STW11NK100Z
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 5.38$ 5.38$
5 - 9 5.11$ 5.11$
10 - 24 4.84$ 4.84$
25 - 45 4.57$ 4.57$
Quantity U.P
1 - 4 5.38$ 5.38$
5 - 9 5.11$ 5.11$
10 - 24 4.84$ 4.84$
25 - 45 4.57$ 4.57$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 45
Set of 1

STW11NK100Z. C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. Id(imp): 33.2A. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: W11NK100Z. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 1.1 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 1000V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 25/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 52
IRFPG50

IRFPG50

C(in): 2800pF. Cost): 250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type o...
IRFPG50
C(in): 2800pF. Cost): 250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 24A. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 1000V. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v. Drain-source protection : yes. G-S Protection: no
IRFPG50
C(in): 2800pF. Cost): 250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 24A. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 1000V. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v. Drain-source protection : yes. G-S Protection: no
Set of 1
5.82$ VAT incl.
(5.82$ excl. VAT)
5.82$

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