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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V - STW11NK100Z

N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V - STW11NK100Z
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 5.38$ 5.38$
5 - 9 5.11$ 5.11$
10 - 24 4.95$ 4.95$
25 - 38 4.73$ 4.73$
Quantity U.P
1 - 4 5.38$ 5.38$
5 - 9 5.11$ 5.11$
10 - 24 4.95$ 4.95$
25 - 38 4.73$ 4.73$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 38
Set of 1

N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V - STW11NK100Z. N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 1000V. C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. G-S Protection: yes. Id(imp): 33.2A. IDss (min): 1uA. Marking on the case: W11NK100Z. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 24/06/2025, 06:25.

Technical documentation

Equivalent products :

Quantity in stock : 52
IRFPG50

IRFPG50

N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V. ID (T=100°C): 3.9A. ID (T...
IRFPG50
N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 1000V. C(in): 2800pF. Cost): 250pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 24A. IDss (min): 100uA. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v
IRFPG50
N-channel transistor, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 1000V. C(in): 2800pF. Cost): 250pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 24A. IDss (min): 100uA. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v
Set of 1
5.82$ VAT incl.
(5.82$ excl. VAT)
5.82$

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