Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.77$ | 3.77$ |
5 - 9 | 3.58$ | 3.58$ |
10 - 13 | 3.39$ | 3.39$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.77$ | 3.77$ |
5 - 9 | 3.58$ | 3.58$ |
10 - 13 | 3.39$ | 3.39$ |
2SC4770. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Max hFE gain: 8. Minimum hFE gain: 3. Collector current: 7A. Ic(pulse): 16A. Pd (Power Dissipation, Max): 60W. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf (type): 0.1us. Housing: TO-3PF ( SOT399 / 2-16E3A ). Housing (according to data sheet): TO3PML. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Maximum saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 800V. Vebo: 7V. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 02:25.
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